EMDA5N10F

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

ProductSummary: BVDSS100V RDSON(MAX.)150mΩ ID10A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree

LMTL5N10

100VN-ChannelEnhancementModeMOSFET

MTBA5N10FP

N-ChannelEnhancementModePowerMOSFET

MTBA5N10FP-K

N-ChannelEnhancementModePowerMOSFET

MTD5N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=5A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.5Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,p

PJW5N10

100VN-ChannelEnhancementModeMOSFET

Features RDS(ON),VGS@10V,ID@2.5A

PJW5N10

100VN-ChannelEnhancementModeMOSFET

PJW5N10A

100VN-ChannelEnhancementModeMOSFET

Features RDS(ON),VGS@10V,ID@4A

PJW5N10-AU

100VN-ChannelEnhancementModeMOSFET

RDS(ON),VGS@10V,ID@2.5A

TF5N10

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Description TheTF5N10usesadvancedtrenchtechnology toprovideexcellentRDS(ON),lowgatechargeand operationwithgatevoltagesaslowas4.5V.This deviceissuitableforuseasaBatteryprotection orinotherSwitchingapplication. GeneralFeatures VDS=100VID=5A RDS(ONty