丝印：MA6；Package：SOT-23；100V N-Channel Enhancement Mode MOSFET

文件：7.08509 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子

N-Channel Enhancement Mode Power MOSFET

文件：356.12 Kbytes 页数：10 Pages

CYSTEKEC

全宇昕科技

N-Channel Enhancement Mode Power MOSFET

文件：356.12 Kbytes 页数：10 Pages

CYSTEKEC

全宇昕科技

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.5Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, p

文件：344.7 Kbytes 页数：2 Pages

ISC

无锡固电