2N & 2P?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: N‐CH P‐CH BVDSS 3 0V ‐30V RDSON (MAX.) 40mΩ 45mΩ ID 5.5A ‐4.5A Pb‐Free Lead Plating & Halogen Free

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EXCELLIANCE

杰力科技

Power MOSFETs-Complementary

Excelliance MOS

杰力科技

DUAL FULL BRIDGE

DESCRIPTION The L9930 is a dual full-bridge. The output stages are Power Mos switches. ■ RDS ON = 2Ω ■ INTERNAL CLAMPING VOLTAGE = 32V ■ INTERNAL FREE WHEELING DIODES ■ PARALLEL DRIVE CAPABILITY ■ RESISTIVE OR INDUCTIVE LOAD PROTECTION: ■ TEMPERATURE PROTECTION ■ SHORT-CIRCUIT PROTECTION

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STMICROELECTRONICS

意法半导体

DUAL N-AND DUAL P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS

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ETCList of Unclassifed Manufacturers

未分类制造商

LINEAR CODEC FOR DIGITAL CELLULAR TELEPHONE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

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NEC

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