P?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS ‐30V RDSON (MAX.) 85mΩ ID ‐3.6A Pb‐Free Lead Plating & Halogen Free

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EXCELLIANCE

杰力科技

Power MOSFETs-P Channel

Excelliance MOS

杰力科技

P-Channel Enhancement Mode Power MOSFET

Description The G80P03K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

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GOFORD

谷峰半导体

P -CHANNEL ENHANCEMENT MODE POWER MOSFET

● General Description Th e TF80P03 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDSON .This device is ideal for load switch and battery protection applications. ● Features Advance high cell densityTrench technology Low RDS(ON) to minimi

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TUOFENG

拓锋半导体

P-Ch MOSFET

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WIINSOK

微硕半导体