EMB80P03VAT

P?륝hannel Logic Level Enhancement Mode Field Effect Transistor

ProductSummary: BVDSS‐30V RDSON(MAX.)85mΩ ID‐3.6A Pb‐FreeLeadPlating&HalogenFree

EMB80P03G

P?륝hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS‐30V RDSON(MAX.)80mΩ ID‐3.5A Pb‐FreeLeadPlating&HalogenFree

EMB80P03J

P?륝hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS‐30V RDSON(MAX.)85mΩ ID‐3.6A Pb‐FreeLeadPlating&HalogenFree

EMB80P03JS

P?륝hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS‐30V RDSON(MAX.)85mΩ ID‐3.6A Pb‐FreeLeadPlating&HalogenFree

G80P03K

P-ChannelEnhancementModePowerMOSFET

Description TheG80P03Kusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

TF80P03

P-CHANNELENHANCEMENTMODEPOWERMOSFET

●GeneralDescription TheTF80P03combinesadvancedtrenchMOSFET technologywithalowresistancepackagetoprovide extremelylowRDSON.Thisdeviceisidealforloadswitch andbatteryprotectionapplications. ●Features AdvancehighcelldensityTrenchtechnology LowRDS(ON)tominimi

WSC80P03

P-ChMOSFET