N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 60V RDSON (MAX.) 58mΩ ID 15A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

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EXCELLIANCE

杰力科技

Power MOSFETs-N Channel

Excelliance MOS

杰力科技

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

文件：171.8 Kbytes 页数：5 Pages

EXCELLIANCE

杰力科技

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

文件：195.76 Kbytes 页数：5 Pages

EXCELLIANCE

杰力科技

N-Channel Enhancement Mode Power MOSFET

Description The G60N06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

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GOFORD

谷峰半导体