EMB45N06A

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

ProductSummary: BVDSS60V RDSON(MAX.)45mΩ ID18A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree

EMB45N06G

N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS60V RDSON(MAX.)45mΩ ID6.5A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree

HFP45N06

N-ChannelMOSFET

HRP45N06K

60VN-ChannelTrenchMOSFET

NP45N06VDK

N-channelPowerMOSFET

NP45N06VUK

60V–45A–N-channelPowerMOSFETApplication:Automotive

Description TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance RDS(on)=9.6mMAX.(VGS=10V,ID=23A) LowCiss:Ciss=1690pFTYP.(VDS=25V) Designedforautomotiveapplicationan

NTB45N06

PowerMOSFET45Amps,60Volts

PowerMOSFET45Amps,60Volts N−ChannelTO−220andD2PAK Designedforlowvoltage,highspeedswitchingapplicationsinpowersupplies,convertersandpowermotorcontrolsandbridgecircuits. Features •HigherCurrentRating •LowerRDS(on) •LowerVDS(on) •LowerCapaci

NTB45N06

PowerMOSFET45Amps,60Volts

NTB45N06

PowerMOSFET45Amps,60VoltsN?묬hannelTO??20andD2PAK

NTB45N06

PowerMOSFET45Amps,60VoltsN?밅hannelTO??20andD2PAK