N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 30V RDSON (MAX.) 20mΩ ID 7A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

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EXCELLIANCE

杰力科技

Power MOSFETs-N Channel

Excelliance MOS

杰力科技

N-Channel Logic Level Enhancement Mode Field Effect Transistor

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EXCELLIANCE

杰力科技

Plastic-Encapsulate MOSFETS

DESCRIPTION The FQ20N03Q combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications APPLICATIONS Battery protection applications Load switch

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GWSEMI

唯圣电子

N-Channel Enhancement Mode Power MOSFET

Description The G20N03K uses advanced trench technology to provide excellent R DS(ON) , low gate charge. It can be used in a wide variety of applications. Application  Power switch DC/DC converters

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GOFORD

谷峰半导体