N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

文件：183.66 Kbytes 页数：5 Pages

EXCELLIANCE

杰力科技

Power MOSFETs-N Channel

Excelliance MOS

杰力科技

TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.180 OHM

文件：222.11 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.180 OHM

文件：222.11 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.1 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION ■ THR

文件：177.93 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体