N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 100V RDSON (MAX.) 12mΩ ID 32A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

文件：206.7 Kbytes 页数：5 Pages

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P?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS ‐30V RDSON (MAX.)(VGS=‐10V) 10mΩ ID ‐13A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

文件：186.6 Kbytes 页数：5 Pages

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P?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS ‐30V RDSON (MAX.) 12mΩ ID ‐21A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

文件：197.44 Kbytes 页数：5 Pages

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P?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS ‐40V RDSON (MAX.) 12.6mΩ ID ‐25A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

文件：223.72 Kbytes 页数：6 Pages

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EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

文件：370.45 Kbytes 页数：17 Pages

TI

德州仪器

丝印：SA3B；Package：HVSSOP；EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

文件：370.45 Kbytes 页数：17 Pages

TI

德州仪器

丝印：SA3B；Package：HVSSOP；EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

文件：370.45 Kbytes 页数：17 Pages

TI

德州仪器

丝印：SA3B；Package：HVSSOP；EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

文件：370.45 Kbytes 页数：17 Pages

TI

德州仪器

丝印：SA3B；Package：HVSSOP；EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

文件：370.45 Kbytes 页数：17 Pages

TI

德州仪器

丝印：SA3B；Package：HVSSOP；EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

文件：370.45 Kbytes 页数：17 Pages

TI

德州仪器