EMB06N03E

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

ProductSummary: BVDSS30V RDSON(MAX.)6mΩ ID80A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree

EMB06N03G

N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS30V RDSON(MAX.)6mΩ ID18A UIS,Rg100Tested Pb‐FreeLeadPlating

EMB06N03GH

N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS30V RDSON(MAX.)6mΩ ID18A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree

EMB06N03H

N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS30V RDSON(MAX.)6mΩ ID75A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree

EMB06N03HR

N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS30V RDSON(MAX.)6mΩ ID75A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree

EMB06N03V

N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS30V RDSON(MAX.)6mΩ ID26A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree

FTD06N03N

N-ChannelEnhancement

InPowerProductLines

FTD06N03NA

N-ChannelMOSFET

Applications: ●Adaptor ●Charger ●SMPS Features: ●RoHSCompliant ●LowONResistance ●LowGateCharge ●PeakCurrentvsPulseWidthCurve InductiveSwitchingCurves

IPB06N03LA

OptiMOS2Power-Transistor

Features •Idealforhigh-frequencydc/dcconverters •N-channel •Logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •Superiorthermalresistance •175°Coperatingtemperature •dv/dtrated

IPB06N03LAG

OptiMOS짰2Power-Transistor

Features •Idealforhigh-frequencydc/dcconverters •QualifiedaccordingtoJEDEC1)fortargetapplications •N-channel-Logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •Superiorthermalresistance •175°Coperatingtemperature •dv/dtr