| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Low Distortion GaAs Power FET LowDistortionGaAsPowerFET •+25.0dBmTYPICALOUTPUTPOWER •10.5dBTYPICALPOWERGAINAT12GHz •HIGHBVgdFOR10VBIAS •0.3X600MICRONRECESSED“MUSHROOM”GATE •Si3N4PASSIVATION •ADVANCEDEPITAXIALDOPINGPROFILEPROVIDESHIGHPOWEREFFICIENCY,LINEARITYANDRELIABILITY •IdssSO | Excelics Excelics Semiconductor, Inc. | Excelics | ||
Low Distortion GaAs Power FET LowDistortionGaAsPowerFET •+28.0dBmTYPICALOUTPUTPOWER •9.5dBTYPICALPOWERGAINAT12GHz •HIGHBVgdFOR10VBIAS •0.3X1200MICRONRECESSED“MUSHROOM”GATE •Si3N4PASSIVATION •ADVANCEDEPITAXIALDOPINGPROFILEPROVIDESHIGHPOWEREFFICIENCY,LINEARITYANDRELIABILITY •IdssSO | Excelics Excelics Semiconductor, Inc. | Excelics | ||
Low Distortion GaAs Power FET LowDistortionGaAsPowerFET •+31.0dBmTYPICALOUTPUTPOWER •8.5dBTYPICALPOWERGAINAT12GHz •HIGHBVgdFOR10VBIAS •0.3X2400MICRONRECESSED“MUSHROOM”GATE •Si3N4PASSIVATION •ADVANCEDEPITAXIALDOPINGPROFILEPROVIDESHIGHPOWEREFFICIENCY,LINEARITYANDRELIABILITY •IdssSO | Excelics Excelics Semiconductor, Inc. | Excelics | ||
Low Distortion GaAs Power FET LowDistortionGaAsPowerFET •+31.0dBmTYPICALOUTPUTPOWER •18.5dBTYPICALPOWERGAINAT2GHz •HIGHBVgdFOR10VBIAS •0.5X2400MICRONRECESSED“MUSHROOM”GATE •Si3N4PASSIVATION •ADVANCEDEPITAXIALDOPINGPROFILEPROVIDESHIGHPOWEREFFICIENCY,LINEARITYANDRELIABILITY •IdssSO | Excelics Excelics Semiconductor, Inc. | Excelics | ||
N-Channel Silicon MOSFET General-Purpose Switching Device Applications General-PurposeSwitchingDeviceApplications Features •2.5Vdrive. •BestsuitedforLiBcharginganddischargingswitch. •Common-draintype. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | SANYO | ||
N-Channel Silicon MOSFET General-Purpose Switching Device Applications General-PurposeSwitchingDeviceApplications Features •2.5Vdrive. •BestsuitedforLiBcharginganddischargingswitch. •Common-draintype. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | SANYO | ||
N-Channel Silicon MOSFET General-Purpose Switching Device Applications N-ChannelSiliconMOSFET Features •2.5Vdrive. •BestsuitedforLiBcharginganddischargingswitch. •Common-draintype. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | SANYO | ||
N-Channel Silicon MOSFET General-Purpose Switching Device Applications General-PurposeSwitchingDeviceApplications Features •2.5Vdrive. •BestsuitedforLiBcharginganddischargingswitch. •Common-draintype. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | SANYO | ||
N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features •2.5Vdrive •Built-ingateprotectionresistor •BestsuitedforLiBcharginganddischargingswitch •Common-draintype •Halogenfreecompliance | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | SANYO | ||
N-Channel Power MOSFET Features •2.5Vdrive •Built-ingateprotectionresistor •BestsuitedforLiBcharginganddischargingswitch •Common-draintype •Halogenfreecompliance | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI |
详细参数
- 型号：
EFC
- 功能描述：
Low Distortion GaAs Power FET
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
EXCELICS |
23+ |
NA |
39960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
2022+ |
5 |
全新原装 货期两周 |
询价 | ||||
CHINAXYJ |
23+ |
0805L |
9868 |
专做原装正品,假一罚百! |
询价 | ||
DELTAPRODUCTSCORPORATION |
2447 |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
Delta |
22+ |
NA |
1313 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
原厂原包 |
24+ |
原装 |
38560 |
原装进口现货,工厂客户可以放款。17377264928微信同 |
询价 | ||
DELTA |
2023+ |
散热风扇 |
338 |
专营DELTA绝对现货特价 |
询价 | ||
SHENZHEN DONG-WEI-FENG ELECTRO |
23+ |
SMD |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
Excelics |
1922+ |
8600 |
莱克讯原厂货源每一片都来自原厂原装现货薄利多 |
询价 | |||
CrydomCo. |
23+ |
MODULEPOWER240VACCERAMIC |
1690 |
专业代理销售半导体模块,能提供更多数量 |
询价 |
相关规格书
更多- EFC075
- EFC075-2
- EFC100
- EFC100-1
- EFC120B
- EFC1248DF-9M08
- EFC150
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相关库存
更多- EFC075-1
- EFC0812DB-F00
- EFC-100
- EFC120
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- EFC125
- EFC16A
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- EFC301-3PB6
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- EFC304-3PB6
- EFC4601
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- EFCH1842TCD1
- EFCH1842TDA1
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- EFC-H1950TCD1
