Low Distortion GaAs Power FET

Low Distortion GaAs Power FET • +25.0dBm TYPICAL OUTPUT POWER • 10.5dB TYPICAL POWER GAIN AT 12GHz • HIGH BVgd FOR 10V BIAS • 0.3 X 600 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY • Idss SO

文件：25.81 Kbytes 页数：2 Pages

EXCELICS

Low Distortion GaAs Power FET

Low Distortion GaAs Power FET • +28.0dBm TYPICAL OUTPUT POWER • 9.5dB TYPICAL POWER GAIN AT 12GHz • HIGH BVgd FOR 10V BIAS • 0.3 X 1200 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY • Idss SO

文件：28.03 Kbytes 页数：2 Pages

EXCELICS

Low Distortion GaAs Power FET

Low Distortion GaAs Power FET • +31.0dBm TYPICAL OUTPUT POWER • 8.5dB TYPICAL POWER GAIN AT 12GHz • HIGH BVgd FOR 10V BIAS • 0.3 X 2400 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY • Idss SO

文件：32.72 Kbytes 页数：2 Pages

EXCELICS

Low Distortion GaAs Power FET

Low Distortion GaAs Power FET • +31.0dBm TYPICAL OUTPUT POWER • 18.5dB TYPICAL POWER GAIN AT 2GHz • HIGH BVgd FOR 10V BIAS • 0.5 X 2400 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY • Idss SO

文件：24.47 Kbytes 页数：2 Pages

EXCELICS

N-Channel Silicon MOSFET General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • 2.5V drive. • Best suited for LiB charging and discharging switch. • Common-drain type.

文件：78.92 Kbytes 页数：6 Pages

SANYO

三洋

N-Channel Silicon MOSFET General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • 2.5V drive. • Best suited for LiB charging and discharging switch. • Common-drain type.

文件：130.1 Kbytes 页数：6 Pages

SANYO

三洋

N-Channel Silicon MOSFET General-Purpose Switching Device Applications

N-Channel Silicon MOSFET Features • 2.5V drive. • Best suited for LiB charging and discharging switch. • Common-drain type.

文件：77.53 Kbytes 页数：6 Pages

SANYO

三洋

N-Channel Silicon MOSFET General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • 2.5V drive. • Best suited for LiB charging and discharging switch. • Common-drain type.

文件：128.58 Kbytes 页数：6 Pages

SANYO

三洋

N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Features • 2.5V drive • Built-in gate protection resistor • Best suited for LiB charging and discharging switch • Common-drain type • Halogen free compliance

文件：272.33 Kbytes 页数：5 Pages

SANYO

三洋

N-Channel Power MOSFET

Features • 2.5V drive • Built-in gate protection resistor • Best suited for LiB charging and discharging switch • Common-drain type • Halogen free compliance

文件：290.39 Kbytes 页数：8 Pages

ONSEMI

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