Power MOSFET

This Power MOSFET features a low on-state resistance. This device is suitable for applications such as power switches of portable machines. Best suited for 1-2 cells lithium-ion battery applications. Features • 2.5 V drive • Common-Drain type • ESD Diode-Protected Gate • Pb-Free, Halogen Free

文件：768.13 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Power MOSFET

This Power MOSFET features a low on-state resistance. This device is suitable for applications such as power switches of portable machines. Best suited for 1-2 cells lithium-ion battery applications. Features • 2.5 V drive • Common-Drain type • ESD Diode-Protected Gate • Pb-Free, Halogen Free

文件：768.13 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

N-Channel Power MOSFET

Features • 2.5V drive • Built-in gate protection resistor • Best suited for LiB charging and discharging switch • Common-drain type • Halogen free compliance

文件：290.39 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

General-Purpose Switching Device Applications

Features • 2.5V drive • Built-in gate protection resistor • Best suited for LiB charging and discharging switch • Common-drain type • Halogen free compliance

文件：209.36 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Features • 2.5V drive • Best suited for LiB charging and discharging switch • Common-drain type

文件：295.48 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Features • 2.5V drive • Best suited for LiB charging and discharging switch • Common-drain type • Protection diode in • Halogen free compliance

文件：339.53 Kbytes 页数：5 Pages

SANYO

三洋

N-Channel Silicon MOSFET General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • 2.5V drive • Best suited for LiB charging and discharging switch • Common-drain type

文件：394.85 Kbytes 页数：5 Pages

SANYO

三洋

General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • 2.5V drive • Best suited for LiB charging and discharging switch • Common-drain type • Protection diode in • Halogen free compliance

文件：397.81 Kbytes 页数：5 Pages

SANYO

三洋

Low Distortion GaAs Power FET

[Excelics] Low Distortion GaAs Power FET • +33.5dBm TYPICAL OUTPUT POWER • 18.0dB TYPICAL POWER GAIN AT 2GHz • High BVgd FOR 10V BIAS • 0.5 X 4800 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION AND PLATED HEAT SINK • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LIN

文件：33.6 Kbytes 页数：2 Pages

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Low Distortion GaAs Power FET

Low Distortion GaAs Power FET • +33.5dBm TYPICAL OUTPUT POWER • 18.0dB TYPICAL POWER GAIN AT 2GHz • High BVgd FOR 10V BIAS • 0.5 X 4800 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION AND PLATED HEAT SINK • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND R

文件：30.99 Kbytes 页数：2 Pages

EXCELICS