EC733611E中文资料-30V,-12A P-channel MOSFET数据手册E-CMOS规格书
EC733611E规格书详情
描述 Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications
特性 Features
◆ Advanced MOSFET process technology
◆ Special designed for PWM, load switching and general purpose applications
◆ Ultra low on-resistance with low gate charge
◆ Fast switching and reverse body recovery
◆ 150℃ operating temperature
技术参数
- 制造商编号
：EC733611E
- 生产厂家
：E-CMOS
- VDS(V)
：-30
- VGS(±V)
：20
- RDS(ON)@VGS
：10.6mΩ@-10V
- ID(A)
：-12
- Package
：SOP8
