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EC732N7002KB中文资料60V,0.3A N-channel MOSFET数据手册E-CMOS规格书
EC732N7002KB规格书详情
描述 Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
特性 Features
n Advanced MOSFET process technology
n Special designed for PWM, load switching and
general purpose applications
n Ultra low on-resistance with low gate charge
n Fast switching and reverse body recovery
n ESD Rating：1000V HBM
n 150℃ operating temperature
技术参数
- 制造商编号
：EC732N7002KB
- 生产厂家
：E-CMOS
- VDS(V)
：60
- VGS(±V)
：20
- RDS(ON)@VGS
：2Ω@10V
- ID(A)
：0.3
- Package
：SOT23-3
