EC73109D数据手册E-CMOS中文资料规格书
EC73109D规格书详情
描述 Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance withhigh repetitive avalanche rating. These features combine to make this design an extremely efficient and reliabledevice for use in power switching application and a wide variety of other applications.
特性 Features
◆Advanced MOSFET process technology
◆Special designed for PWM, load switching and general purpose applications
◆Ultra low on-resistance with low gate charge
◆Fast switching and reverse body recovery
◆175℃ operating temperature
技术参数
- 制造商编号
：EC73109D
- 生产厂家
：E-CMOS
- VDS(V)
：100
- VGS(±V)
：15
- RDS(ON)@VGS
：60mΩ@10V
- ID(A)
：15
- Package
：TO252
