EC731020J7中文资料100V,60A N-channel MOSFET数据手册E-CMOS规格书

描述 Description

It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.

特性 Features

n  Advanced MOSFET process technology
n  Special designed for PWM, load switching and
     general purpose applications
n  Ultra low on-resistance with low gate charge
n  Fast switching and reverse body recovery
n  175℃ operating temperature