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EC732129H3数据手册E-CMOS中文资料规格书
EC732129H3规格书详情
描述 Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance withhigh repetitive avalanche rating. These features combine to make this design an extremely efficient and reliabledevice for use in power switching application and a wide variety of other applications.
特性 Features
◆ Advanced MOSFET process technology
◆ Special designedfor PWM, load switching and general purpose applications
◆ Ultra low on-resistance with low gate charge
◆ Fast switching and reverse body recovery
◆ 150℃ operating temperature
技术参数
- 制造商编号
：EC732129H3
- 生产厂家
：E-CMOS
- VDS(V)
：-20
- VGS(±V)
：8
- RDS(ON)@VGS
：21mΩ@4.5V
- ID(A)
：-6
- Package
：SOP8
