60V, 0.3A N-Channel MOSFET

文件：267.57 Kbytes 页数：6 Pages

E-CMOS

飞虹高科

丝印：S72K；Package：SOT23-3L；60V, 0.3A N-Channel MOSFET

文件：640.45 Kbytes 页数：7 Pages

E-CMOS

飞虹高科

丝印：S72K；Package：SOT23-3L；60V, 0.3A N-Channel MOSFET

文件：267.57 Kbytes 页数：6 Pages

E-CMOS

飞虹高科

60V,0.3A N-channel MOSFET

It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other n  Advanced MOSFET process technology\nn  Special designed for PWM, load switching and\n     general purpose applications\nn  Ultra low on-resistance with low gate charge\nn  Fast switching and reverse body recovery\nn  ESD Rating：1000V HBM\nn  150℃ operating temperature\n ;

E-CMOS

飞虹高科