丝印：E6D；Package：SOT-23-5；SINGLE LOW VOLTAGE RAIL-TO-RAIL OUTPUT OPERATIONAL AMPLIFIER

Features  Guaranteed 2.7V to 5.5V Performance  No Crossover Distortion  Gain-Bandwidth Product 1MHz  Industrial Temperature Range: -40ºC to +85ºC  Low Supply Current: 130μA  Rail-to-Rail Output Swing under 10kΩ Load: VOH up to VCC-10mV VOL near to VEE+65mV  VCM: -0.1V to VCC-0.8V

文件：391.97 Kbytes 页数：13 Pages

DIODES

美台半导体

丝印：E6D10065A；Package：TO-220-2；E-Series Automotive 650 V, 10 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

文件：634.52 Kbytes 页数：9 Pages

WOLFSPEED

丝印：E6D10065G；Package：TO-263-2；E-Series Automotive 650 V, 10 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

文件：553.88 Kbytes 页数：9 Pages

WOLFSPEED

丝印：E6D16065A；Package：TO-220-2；E-Series Automotive 650 V, 16 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

文件：638.08 Kbytes 页数：9 Pages

WOLFSPEED

丝印：E6D16065D1；Package：TO-247-3；E-Series Automotive 650 V, 16 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

文件：572.83 Kbytes 页数：9 Pages

WOLFSPEED

丝印：E6D16065G；Package：TO-263-2；E-Series Automotive 650 V, 16 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

文件：558.13 Kbytes 页数：9 Pages

WOLFSPEED

丝印：E6D16065H；Package：TO-247-2；E-Series Automotive 650 V, 16 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

文件：560.08 Kbytes 页数：9 Pages

WOLFSPEED

丝印：E6D20065A；Package：TO-220-2；E-Series Automotive 650 V, 20 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

文件：655.67 Kbytes 页数：9 Pages

WOLFSPEED

丝印：E6D20065D；Package：TO-247-3；E-Series Automotive 650 V, 20 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

文件：573.46 Kbytes 页数：9 Pages

WOLFSPEED

丝印：E6D20065G；Package：TO-263-2；E-Series Automotive 650 V, 20 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

文件：560.99 Kbytes 页数：9 Pages

WOLFSPEED