丝印：E6D16065H；Package：TO-247-2；E-Series Automotive 650 V, 16 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

文件：560.08 Kbytes 页数：9 Pages

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裸芯片 MOSFET

650 V, 16 A, TO-247-2 package, Automotive qualified, Discrete SiC Schottky Diode

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Silicon Carbide Schottky Diode Z-Rec® Rectifier

Features • New 6th Generation Technology • Low Forward Voltage Drop (VF ) • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • Low Leakage Current (Ir ) • Temperature-Independent Switching Behavior • Positive Temperature Coefficient on VF Benefits • Higher System Level Effi

文件：671.8 Kbytes 页数：6 Pages

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E-Series Automotive 650 V, 16 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

文件：638.08 Kbytes 页数：9 Pages

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E-Series Automotive 650 V, 16 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

文件：558.13 Kbytes 页数：9 Pages

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