丝印：E6D10065G；Package：TO-263-2；E-Series Automotive 650 V, 10 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

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WOLFSPEED

裸芯片 MOSFET

650 V, 10 A, TO-263-2 package, Automotive qualified, Discrete SiC Schottky Diode

Wolfspeed(CREE)

10A 650V SIC POWER SCHOTTKY RECTIFIERS

 175°C TJ operation  Ultra-low switching loss  Switching speeds independent of operating temperature  Low total conduction losses  High forward surge current capability  High package isolation voltage  Terminals finish: 100 Pure Tin  Pb − Free Device  All SMC parts are traceable t

文件：863.61 Kbytes 页数：11 Pages

SMCDIODE

桑德斯微电子

650V SIC POWER SCHOTTKY RECTIFIER

175°C TJ operation Ultra-low switching loss Switching speeds independent of operating temperature Low total conduction losses High forward surge current capability High package isolation voltage “-A” is an AEC-Q101 qualified device Terminals finish: 100 Pure Tin Halogen-Free All SMC parts

文件：574.29 Kbytes 页数：8 Pages

SMCDIODE

桑德斯微电子

10A 650V SIC POWER SCHOTTKY RECTIFIERS

 175°C TJ operation  Ultra-low switching loss  Switching speeds independent of operating temperature  Low total conduction losses  High forward surge current capability  High package isolation voltage  Terminals finish: 100 Pure Tin  Pb − Free Device  All SMC parts are traceable t

文件：863.61 Kbytes 页数：11 Pages

SMCDIODE

桑德斯微电子