E-Series Automotive 4th Generation 1200 V, 20 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

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丝印：E4D20120；Package：TO-220-2；Silicon Carbide Schottky Diode E-Series Automotive

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1200 V Discrete Silicon Carbide Schottky Diodes

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Package：TO-220-2；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：E SERIES, 20 AMP, 1200V G4 SCHOT

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