丝印：E4D10120；Package：TO-220-2；Silicon Carbide Schottky Diode E-Series Automotive

文件：603.87 Kbytes 页数：6 Pages

Cree

科锐

丝印：E4D10120；Package：TO-220-2；Silicon Carbide Schottky Diode E-Series Automotive

文件：603.87 Kbytes 页数：6 Pages

Cree

科锐

E-Series Automotive 4th Generation 1200 V, 10 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

文件：1.62613 Mbytes 页数：9 Pages

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