E4M0025075J2

Marking：E4M0025075J2；Package：TO-263-7XL；Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode

Features •750VSiCMOSFETtechnology •Optimizedpackagewithseparatedriversourcepin •4.7mmofcreepagedistancebetweendrainandsource •Highblockingvoltagewithlowon-resistance •High-speedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery(Qrr)