Description

With the performance advantages of a Silicon Carbide (SiC)

Schottky Barrier diode, power electronics systems can expect

to meet higher efficiency standards than Si-based solutions,

while also reaching higher frequencies and power densities.

SiC diodes can be easily paralleled to meet various application

demands, without concern of thermal runaway. In combination

with the reduced cooling requirements and improved thermal

performance of SiC products, SiC diodes are able to provide

lower overall system costs in a variety of diverse applications.

Features

• Low Forward Voltage (VF

) Drop with Positive

Temperature Coefficient

• Zero Reverse Recovery Current / Forward

Recovery Voltage

• Temperature-Independent Switching Behavior

• Automotive Qualified (AEC Q101) and PPAP

Capable

Applications

• Industrial Switched Mode Power Supplies

• Uninterruptible & AUX Power Supplies

• Boost for PFC & DC-DC Stages

• Solar Inverters

E4D10120A属于分立半导体产品 > 二极管 - 整流器 - 单。WOLFSPEED, INC.制造生产的E4D10120A二极管 - 整流器 - 单单整流器二极管系列产品可用于让电流仅沿一个方向流动，并且每个器件封装都恰好实现该功能的一个实例。其他用途的二极管（包括齐纳二极管和可变电容二极管）单独列在各自的产品系列中，每个器件封装中包含多个二极管的产品也是如此。