PESD15VS5UD

Marking：E4；Package：SC-74；Fivefold ESD protection diode arrays

1.1Generaldescription FivefoldElectroStaticDischarge(ESD)protectiondiodearraysinaSOT457(SC-74)small Surface-MountedDevice(SMD)plasticpackagedesignedtoprotectuptofivesignallines fromthedamagecausedbyESDandothertransients. 1.2Features 1.3Applications nESDpr

PESD15VS5UD-Q

Marking：E4；Package：SOT457；Fivefold ESD protection diode array

1.Generaldescription FivefoldElectroStaticDischarge(ESD)protectiondiodearrayinaSOT457(SC-74)smallSurface- MountedDevice(SMD)plasticpackage,designedtoprotectuptofivesignallinesfromthe damagecausedbyESDandothertransients. 2.Featuresandbenefits •ESDprotecti

PMEG100T20ELP

Marking：E4；Package：CFP5；100 V, 2 A low leakage current Trench MEGA Schottky barrier rectifier

1.Generaldescription TrenchMaximumEfficiencyGeneralApplication(MEGA)Schottkybarrierrectifierencapsulatedin aCFP5(SOD128)smallandflatleadSurface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Lowforwardvoltage •LowQrrandlowIRM •Lowleakagecurren

PMEG100T20ELP-Q

Marking：E4；Package：CFP5；100 V, 2 A low leakage current Trench MEGA Schottky barrier rectifier

1.Generaldescription TrenchMaximumEfficiencyGeneralApplication(MEGA)Schottkybarrierrectifierencapsulatedin aCFP5(SOD128)smallandflatleadSurface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Lowforwardvoltage •LowQrrandlowIRM •Lowleakagecurren

PMEG3005AEA

Marking：E4；Package：SOD323；Very low VF MEGA Schottky barrier rectifier

1.Generaldescription PlanarMaximumEfficiencyGeneralApplication(MEGA)Schottkybarrierrectifierwithanintegrated guardringforstressprotection,encapsulatedinaSOD323(SC-76)verysmallSMDplastic package. 2.Featuresandbenefits •Verylowforwardvoltage •Highsurgecurr

RBR3MM60BTF

Marking：E4；Package：SOD-123FL；Schottky Barrier Diode

●Features Highreliability Smallpowermoldtype LowVF ●Application Generalrectification

SSM6P35AFE

Marking：E4；Package：ES6；Analog Switches

Features (1)1.2Vdrive (2)ESD(HBM)level2kV (3)Lowdrain-sourceon-resistance :RDS(ON)=3.2Ω(typ.)(@VGS=-1.2V) RDS(ON)=2.3Ω(typ.)(@VGS=-1.5V) RDS(ON)=2.0Ω(typ.)(@VGS=-1.8V) RDS(ON)=1.5Ω(typ.)(@VGS=-2.5V) RDS(ON)=1.1Ω(typ.)(@

SSM6P35AFE

Marking：E4；Package：ES6；MOSFETs Silicon P-Channel MOS

1.Applications •AnalogSwitches 2.Features (1)1.2Vdrive (2)Lowdrain-sourceon-resistance :RDS(ON)=3.2Ω(typ.)(@VGS=-1.2V) RDS(ON)=2.3Ω(typ.)(@VGS=-1.5V) RDS(ON)=2.0Ω(typ.)(@VGS=-1.8V) RDS(ON)=1.5Ω(typ.)(@VGS=-2.5V) RDS(ON)=1.1Ω(typ.)(@VGS=-

SSM6P35AFU

Marking：E4；Package：US6；MOSFETs Silicon P-Channel MOS

1.Applications •AnalogSwitches 2.Features (1)1.2Vdrive (2)Lowdrain-sourceon-resistance :RDS(ON)=3.2Ω(typ.)(@VGS=-1.2V) RDS(ON)=2.3Ω(typ.)(@VGS=-1.5V) RDS(ON)=2.0Ω(typ.)(@VGS=-1.8V) RDS(ON)=1.5Ω(typ.)(@VGS=-2.5V) RDS(ON)=1.1Ω(typ.)(@VGS=-

SSM6P35AFU

Marking：E4；Package：US6；Analog Switches

Features (1)1.2Vdrive (2)ESD(HBM)level2kV (3)Lowdrain-sourceon-resistance :RDS(ON)=3.2Ω(typ.)(@VGS=-1.2V) RDS(ON)=2.3Ω(typ.)(@VGS=-1.5V) RDS(ON)=2.0Ω(typ.)(@VGS=-1.8V) RDS(ON)=1.5Ω(typ.)(@VGS=-2.5V) RDS(ON)=1.1Ω(typ.)(@