MMSZ5234BS

Marking：E4；Package：SOD-323；200mW SURFACE MOUNT ZENER DIODE

PlanarDieConstruction 200mWPowerDissipation 2.4V–51VNominalZenerVoltage 5StandardVzTolerance DesignedforSurfaceMountApplication PlasticMaterial–ULRecognitionFlammability Classification94V-0

MMSZ5234BS

Marking：E4；Package：SOD-323；Silicon Planar Zener Diodes

Features Totalpowerdissipation:Max.500mW. Widezenerreversevoltagerange2.4Vto39V. Smallplasticpackagesuitableforsurfacemounteddesign. Toleranceapproximately±5

NC7S02L6X

Marking：E4；Package：SIP6；TinyLogic HS 2-Input NOR Gate

Description TheNC7S02isasingle2−InputhighperformanceCMOSNOR Gate.AdvancedSiliconGateCMOSfabricationassureshighspeed andlowpowercircuitoperationoverabroadVCCrange.ESD protectiondiodesinherentlyguardbothinputsandoutputwithrespect totheVCCandGNDrails.Thr

NC7S02L6X-L22175

Marking：E4；Package：SIP6；TinyLogic HS 2-Input NOR Gate

Description TheNC7S02isasingle2−InputhighperformanceCMOSNOR Gate.AdvancedSiliconGateCMOSfabricationassureshighspeed andlowpowercircuitoperationoverabroadVCCrange.ESD protectiondiodesinherentlyguardbothinputsandoutputwithrespect totheVCCandGNDrails.Thr

NJU7098AF1-C

Marking：E4；Package：SOT-23-6-1；0.05μV/°C max, Zero-Drift, Single Supply, Rail-to-Rail Output CMOS Operational Amplifier

FEATURES(V+=5V,Typicalvalue) ●LowOffsetVoltage15μVmax. ●Zero-Drift0.05μV/°Cmax. ●SupplyVoltageRange3Vto10V ●Rail-to-RailOutput(RL=10kΩ)20mVfromrail ●OutputCurrent(VO=4.5VatV+=5V)30mA ●DCPrecision Open-LoopVoltageGain140dB CMR,SVR130dB ●SupplyCurrent0.6mA ●

PDTC124EQB

Marking：E4；Package：DFN1110D-3；50 V, 100 mA NPN resistor-equipped transistors

Featuresandbenefits •100mAoutputcurrentcapability •Built-inresistors •Simplifiescircuitdesign •Reducescomponentcount •Reducespickandplacecosts •Lowpackageheightof0.5mm •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint

PDTC124EQB-Q

Marking：E4；Package：DFN1110D-3；50 V, 100 mA NPN resistor-equipped transistors

Featuresandbenefits •100mAoutputcurrentcapability •Built-inresistors •Simplifiescircuitdesign •Reducescomponentcount •Reducespickandplacecosts •Lowpackageheightof0.5mm •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •QualifiedaccordingtoAEC-Q

PDTC144TM

Marking：E4；Package：SOT883；NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = open

FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplification •Inverterandinterfacecircuits •Circuitdriver.

PDTC144TM

Marking：E4；Package：SOT883；NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = open

FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplification •Inverterandinterfacecircuits •Circuitdriver. DESCRIPTION NPNresistor-equippedtransistor(see“Simplif

PESD15VS2UQ

Marking：E4；Package：SOT663；Double ESD protection diodes in SOT663 package

1.1Generaldescription UnidirectionaldoubleElectroStaticDischarge(ESD)protectiondiodesinaSOT663ultra smallandflatleadSurface-MountedDevice(SMD)plasticpackagedesignedtoprotect uptotwosignallinesfromthedamagecausedbyESDandothertransients. 1.2Features 1.3Appl