DMN3012LEG-13

Marking：E04；Package：PowerDI3333-8；30V SYNCHRONOUS N-CHANNEL ENHANCEMENT MODE MOSFET

DescriptionandApplications ThisnewgenerationMOSFETisdesignedtominimizetheon-state resistance(RDS(ON))andyetmaintainsuperiorswitchingperformance, makingitidealforhighefficiencypowermanagementapplications. DC-DCConverters PowerManagementFunctions Featuresand

DMN3012LEG-7

Marking：E04；Package：PowerDI3333-8；30V SYNCHRONOUS N-CHANNEL ENHANCEMENT MODE MOSFET

DescriptionandApplications ThisnewgenerationMOSFETisdesignedtominimizetheon-state resistance(RDS(ON))andyetmaintainsuperiorswitchingperformance, makingitidealforhighefficiencypowermanagementapplications. DC-DCConverters PowerManagementFunctions Featuresand

DTD114T

Marking：E04；DIGITAL TRANSISTOR

Features 1)Built-InBiasingResistors,R1=R2=10kΩ 2)Built-inbiasresistorsenabletheconfigurationof aninvertercircuitwithoutconnectingexternal inputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobeset foroperation,makingthecircuitdesigne

PJE8404_R1_00001

Marking：E04；Package：SOT-523；30V N-Channel Enhancement Mode MOSFET – ESD Protected

Features RDS(ON),VGS@4,5V,ID@0.6A