丝印：E01；Package：SON；14-Bit, Serial Input Multiplying Digital-to-Analog Converter

FEATURES · 14-Bit Monotonic · ±1 LSB INL · ±0.5 LSB DNL · Low Noise: 12 nV/ÖHz · Low Power: I DD = 2 mA · +2.7 V to +5.5 V Analog Power Supply · 2 mA Full-Scale Current ±20% with VREF = 10 V · 0.5 μs Settling Time · 4-Quadrant Multiplying Reference-Input · Reference Bandwidth: 10 MH

文件：848.73 Kbytes 页数：24 Pages

TI2

德州仪器

丝印：E01；Package：SON；14-Bit, Serial Input Multiplying Digital-to-Analog Converter

FEATURES · 14-Bit Monotonic · ±1 LSB INL · ±0.5 LSB DNL · Low Noise: 12 nV/ÖHz · Low Power: I DD = 2 mA · +2.7 V to +5.5 V Analog Power Supply · 2 mA Full-Scale Current ±20% with VREF = 10 V · 0.5 μs Settling Time · 4-Quadrant Multiplying Reference-Input · Reference Bandwidth: 10 MH

文件：848.73 Kbytes 页数：24 Pages

TI2

德州仪器

丝印：E01；Package：SON；14-Bit, Serial Input Multiplying Digital-to-Analog Converter

FEATURES · 14-Bit Monotonic · ±1 LSB INL · ±0.5 LSB DNL · Low Noise: 12 nV/ÖHz · Low Power: I DD = 2 mA · +2.7 V to +5.5 V Analog Power Supply · 2 mA Full-Scale Current ±20% with VREF = 10 V · 0.5 μs Settling Time · 4-Quadrant Multiplying Reference-Input · Reference Bandwidth: 10 MH

文件：848.73 Kbytes 页数：24 Pages

TI2

德州仪器

丝印：E01；Package：SOT-89；Digital transistor built in resistor and zener diode Driver 60V, 1A

Features 1) High hFE. (typ. hFE =750 VCE/IC=2V/0.5A) 2) Low saturation voltage, VCE(sat)=0.4V (IC/IB=500mA/5mA) 3) Built-in zener diode to protect the transistor against reverse voltages when connected to alow load. Structure NPN digital transistor (with single built resistor an

文件：59.95 Kbytes 页数：2 Pages

ROHM

罗姆

丝印：E01；Package：SOT-89；1A / 60V Digital Transistor (with built-in resistor and zener diode)

Features 1) High hFE. (typ. hFE =750 VCE/IC=2V/0.5A) 2) Low saturation voltage, VCE(sat)=0.4V (IC/IB=500mA/5mA) 3) Built-in zener diode to protect the transistor against reverse voltages when connected to alow load. Structure NPN digital transistor (with single built resistor an

文件：56.94 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：E01；Package：SOT-523；20V P-Channel Enhancement Mode MOSFET

Features RDS(ON) , VGS@-4.5V, ID@-0.9A

文件：364.73 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：E01；Package：SOT-89；1A/60V Digital Transistor

文件：1.00801 Mbytes 页数：9 Pages

ROHM

罗姆

丝印：E01；Package：SOT-89；60V /1A Digital Transistor (with built-in resistor and zener diode)

文件：1.17954 Mbytes 页数：8 Pages

ROHM

罗姆

丝印：E012；Package：SOT-23-THIN；TPS3760 High Voltage Supervisor with Programmable Sense and Reset Delay Function

1 Features • Functional Safety-Capable – Documentation available to aid functional safety system design • Wide supply voltage range: 2.7 V to 65 V • SENSE and RESET pins are 65 V graded • Low quiescent current: 1 μA (typical) • Flexible and wide voltage threshold options Table 12-1 – 2.7

文件：1.81999 Mbytes 页数：40 Pages

TI

德州仪器

丝印：E012；Package：SOT-23-THIN；TPS3760 High Voltage Supervisor with Programmable Sense and Reset Delay Function

1 Features • Functional Safety-Capable – Documentation available to aid functional safety system design • Wide supply voltage range: 2.7 V to 65 V • SENSE and RESET pins are 65 V graded • Low quiescent current: 1 μA (typical) • Flexible and wide voltage threshold options Table 12-1 – 2.7

文件：1.89193 Mbytes 页数：44 Pages

TI

德州仪器