60V NPN LOW SATURATION TRANSISTOR

Advanced process capability has been used to maximise the performance of this 60V, NPN transistor. The W-DFN2020-3/SWP(Type A) package offers lower profile and the derating up to +175°C allows higher dissipation for applications where power density is of utmost importance.\n\n •BVCEO > 60V\n•Low Saturation Voltage (100mV Max @1A)\n•hFE Specified up to 6A for High Current Gain Hold Up\n•Low Profile 0.62mm High Package for Thin Applications\n•RθJA Efficient, 60% Lower than SOT23\n•Rated +175°C – Ideal for High Temperature Environment\n•Halogen and Antimony Free. “Green”;

Diodes

美台半导体

Package：3-UDFN 裸露焊盘；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 60V 4A 3DFN

DIODES

美台半导体

100 Amp Rectifier 20 to 100 Volts Schottky Barrier

Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability

文件：132.64 Kbytes 页数：3 Pages

MCC

SCHOTTKY DIODES MODULE TYPE 100A

100Amp Rectifier 20-100 Volts Features • High Surge Capability • Types Up to 100V VRRM

文件：145.75 Kbytes 页数：2 Pages

TEL

Silicon Power Schottky Diode

Features • High Surge Capability • Types from 45 V to 100V VRRM • Isolated to Plate • Not ESD Sensitive

文件：370.3 Kbytes 页数：3 Pages

GENESIC