| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAOU414usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),shoot-throughimmunityandbodydiodecharacteristics.ThisdeviceisideallysuitedforuseasalowsideswitchinCPUcorepowerconversion.StandardProductAOU414isPb-free(meetsROHS&Sony25 | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
HIGHVOLTAGE,PHOTOMOSRELAY | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
HIGHVOLTAGE,PHOTOMOSRELAY | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
Normallyclosed6-pintypeof400VloadvoltageMeasuringinstruments FEATURES 1.Lowon-resistance(typ.26Ω)fornormally-closedtype Thishasbeenachievedthankstothebuilt-inMOSFETprocessedbyourproprietarymethod,DSD(DoublediffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSfeatureextremelylowclosedcircuit | PanasonicPanasonic Corporation 松下松下电器 | Panasonic | ||
Normallyclosed6-pintypeof400VloadvoltageMeasuringinstruments FEATURES 1.Lowon-resistance(typ.26Ω)fornormally-closedtype Thishasbeenachievedthankstothebuilt-inMOSFETprocessedbyourproprietarymethod,DSD(DoublediffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSfeatureextremelylowclosedcircuit | PanasonicPanasonic Corporation 松下松下电器 | Panasonic | ||
HIGHVOLTAGE,PHOTOMOSRELAY | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
Normallyclosed6-pintypeof400VloadvoltageMeasuringinstruments FEATURES 1.Lowon-resistance(typ.26Ω)fornormally-closedtype Thishasbeenachievedthankstothebuilt-inMOSFETprocessedbyourproprietarymethod,DSD(DoublediffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSfeatureextremelylowclosedcircuit | PanasonicPanasonic Corporation 松下松下电器 | Panasonic | ||
Normallyclosed6-pintypeof400VloadvoltageMeasuringinstruments FEATURES 1.Lowon-resistance(typ.26Ω)fornormally-closedtype Thishasbeenachievedthankstothebuilt-inMOSFETprocessedbyourproprietarymethod,DSD(DoublediffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSfeatureextremelylowclosedcircuit | PanasonicPanasonic Corporation 松下松下电器 | Panasonic | ||
PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo | NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司 | NAIS | ||
PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo | NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司 | NAIS | ||
PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo | NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司 | NAIS | ||
PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo | NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司 | NAIS | ||
PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo | NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司 | NAIS | ||
PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo | NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司 | NAIS | ||
PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo | NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司 | NAIS | ||
PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo | NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司 | NAIS | ||
HIGHVOLTAGE,PHOTOMOSRELAY | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
GU(GeneralUse)Type[2-Channel(FormB)Type] | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
HIGHVOLTAGE,PHOTOMOSRELAY | etc2List of Unclassifed Manufacturers etc2未分类制造商 | etc2 | ||
HIGHVOLTAGE,PHOTOMOSRELAY | etc2List of Unclassifed Manufacturers etc2未分类制造商 | etc2 |
详细参数
- 型号：
DT414UN
- 功能描述：
Industrial Control IC
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI |
D/C0406+ |
1000 |
询价 | ||||
NA |
专业模块 |
MODULE |
8513 |
模块原装主营-可开原型号增税票 |
询价 | ||
23+ |
80 |
专业模块销售,欢迎咨询 |
询价 | ||||
INFINEON |
23+ |
425A1000V1200V1400V1600V |
6500 |
全新原装假一赔十 |
询价 | ||
INFINEON |
2023+ |
POWERBLOCK60 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
16+ |
MODULE |
2100 |
公司大量全新现货 随时可以发货 |
询价 | |||
INFINEON |
23+ |
原厂正规渠道 |
5000 |
专注配单,只做原装进口现货 |
询价 | ||
INFINEON |
23+ |
原厂正规渠道 |
5000 |
专注配单,只做原装进口现货 |
询价 | ||
EUPEC/欧派克 |
21+ROHS |
MODULE |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
INFINEON |
2022+ |
MODULE |
7300 |
原装现货 |
询价 |
相关规格书
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相关库存
更多- DT425N10KOF
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