P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features ● High Cell Density DMOS Technology ● Low On-State Resistance ● High Power and Current Capability ● Fast Switching Speed ● High Transient Tolerance

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DIODES

美台半导体

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Diodes

美台半导体

High Reliability SP5T RF Switch 50MHz to 8000MHz

文件：1.76066 Mbytes 页数：22 Pages

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High Reliability SP5T RF Switch 50MHz to 8000MHz

Features  Five symmetric, absorptive RF ports  High isolation: 49dB at 4000MHz  Low insertion loss: 1.1dB at 4000MHz  High linearity: • IIP2 of 114dBm at 2000MHz • IIP3 of 60.5dBm at 4000MHz  High operating power handling: • 33dBm CW on selected RF port • 27dBm on terminated ports 

文件：1.69227 Mbytes 页数：21 Pages

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瑞萨

High Reliability SP5T RF Switch 50MHz to 8000MHz

文件：1.76066 Mbytes 页数：22 Pages

RENESAS

瑞萨