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AS-310

CurrentSenseInductors&Transformers

TALEMA

Talema Group LLC

ASMB-310IR

DualLGA1366Intel짰Xeon짰5500/5600CEBServerBoardwith2PCIex16or4PCIex8,SASRAID

ADVANTECHAdvantech Co., Ltd.

研华科技研华科技(中国)有限公司

AT310

QUARTZCRYSTALRESONATOR

etc2List of Unclassifed Manufacturers

etc2未分类制造商

AT310

DIPCylindricalCrystalMHz3x10mm

FRONTERFronter Electronics Co., Ltd.

锋达电子锋达电子有限公司

AT-310

FixedAttenuators(SMAType)

■Features 1.AbundantVariationsofAttenuators Attenuationamountsareavailableinabundantvariationsfrom0to4dBin0.5dBsteps,from4to10dBin1dBsteps,andin12,13,15,20,26and30dBsothatlevelscanbefinelyadjusted. 2.SMAType Thecouplingportionsareavaila

HIROSEHirose Electric Company

广濑日本广濑电机株式会社

AT310XS

T3/DS3/E3/STS-1TRANSFORMERSEXTENDEDTEMPERATURERANGE

MPSINDMPS Industries, Inc.

美国芯源

ATAVRMC310

8-bitMicrocontrollers

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

ATX-H310A

ATXIndustrialMotherboardwith8th/9thGenerationIntel®Core™Processor,DDR4DRAM,Option:4GLTEFunction

Features ■8th/9thGenerationIntel®Core™LGA1151Processor ■SupportsMax.TDP6Core95W ■DDR42666/2400/2133MHz,max.64GB ■TwoIndependentDisplays:HDMIx1,VGAx1,DPx1 ■DualIntel®GigabitEthernet,i210ATx1,i219Vx1 ■USB3.2Gen1portsx4,USB2.0portsx5 ■M.22280

AAEONAAEON Technology

研扬科技研扬科技(苏州)有限公司

AUSCD310H

SchottkyBarrierDiode

ZOWIEZOWIE

智威智威科技股份有限公司

AVN310N

Heavydutyswitches&pilotlightsofferbothvarietyandreliabilityEnduresharshenvironments

ETC1List of Unclassifed Manufacturers

未分类制造商

AZT310HVI

HIGHCURRENTPHASECONTROL

POSEICO

Power Semiconductors

BFG310

NPN14GHzwidebandtransistor

Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features ■Highpowergain ■Lownoisefigure ■Hightransitionfrequency ■Goldmetallizationensuresexcellentreliability Applications ■IntendedforRadioFrequency(RF)fronte

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BFG310W

NPN14GHzwidebandtransistor

Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features ■Highpowergain ■Lownoisefigure ■Hightransitionfrequency ■Goldmetallizationensuresexcellentreliability Applications ■IntendedforRadioFrequency(RF)fronte

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BFG310W

NPN14GHzwidebandtransistor

Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features Highpowergain Lownoisefigure Hightransitionfrequency Goldmetallizationensuresexcellentreliability Applications IntendedforRadioFrequency(RF)fro

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BFG310W/XR

NPN14GHzwidebandtransistor

Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features Highpowergain Lownoisefigure Hightransitionfrequency Goldmetallizationensuresexcellentreliability Applications IntendedforRadioFrequency(RF)fro

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BFG310W/XR

NPN14GHzwidebandtransistor

Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features ■Highpowergain ■Lownoisefigure ■Hightransitionfrequency ■Goldmetallizationensuresexcellentreliability Applications ■IntendedforRadioFrequency(RF)fronte

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BFG310W-XR

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BFG310XR

NPN14GHzwidebandtransistor

Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features ■Highpowergain ■Lownoisefigure ■Hightransitionfrequency ■Goldmetallizationensuresexcellentreliability Applications ■IntendedforRadioFrequency(RF)fronte

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BFG310XR

NPN14GHzwidebandtransistor

Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features ■Highpowergain ■Lownoisefigure ■Hightransitionfrequency ■Goldmetallizationensuresexcellentreliability Applications ■IntendedforRadioFrequency(RF)fronte

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BFG310-XR

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

详细参数

  • 型号:

    DST310

  • 制造商:

    MURATA

  • 制造商全称:

    Murata Manufacturing Co., Ltd.

  • 功能描述:

    FERRITE BEAD INDUCTORS, EMI SUPPRESSION FILTER COMPACT DISC-TYPE

供应商型号品牌批号封装库存备注价格
muRata/村田
1950+
98552
只做原装正品现货!或订货假一赔十!
询价
MURATA/村田
23+
4000
全新原装数量均有多电话咨询
询价
muRata/村田
20+
SMD
90000
全新原装正品/库存充足
询价
MURATA/村田
22+
1000000
电感只做原装现货 提供一站式配套供货 中利达
询价
MURATA/村田
2022+
4000
原厂代理 终端免费提供样品
询价
MURATA/村田
23+
6800
专注配单,只做原装进口现货
询价
MURATA-村田
24+25+/26+27+
车规-被动器件
96800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
MURATA/村田
23+
6800
专注配单,只做原装进口现货
询价
MURATA/村田
12+
DIP
42000
询价
MURATA/村田
21+ROHS
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
更多DST310供应商 更新时间2024-6-4 14:58:00