4Kb 1-Wire EEPROM with 200k Write/Erase Cycles

General Description  The DS24B33 is a 4096-bit, 1-Wire® EEPROM organized as 16 memory pages of 256 bits each. Data is written to a 32-byte scratchpad, verified, and then copied to the EEPROM memory. The DS24B33 communicates over a single-conductor 1-Wire bus. The communication follows the standar

文件：243.63 Kbytes 页数：22 Pages

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4Kb 1-Wire EEPROM with 200k Write/Erase Cycles

General Description  The DS24B33 is a 4096-bit, 1-Wire® EEPROM organized as 16 memory pages of 256 bits each. Data is written to a 32-byte scratchpad, verified, and then copied to the EEPROM memory. The DS24B33 communicates over a single-conductor 1-Wire bus. The communication follows the standar

文件：243.63 Kbytes 页数：22 Pages

Maxim

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4Kb 1-Wire EEPROM with 200k Write/Erase Cycles

General Description  The DS24B33 is a 4096-bit, 1-Wire® EEPROM organized as 16 memory pages of 256 bits each. Data is written to a 32-byte scratchpad, verified, and then copied to the EEPROM memory. The DS24B33 communicates over a single-conductor 1-Wire bus. The communication follows the standar

文件：243.63 Kbytes 页数：22 Pages

Maxim

美信

4Kb 1-Wire EEPROM with 200k Write/Erase Cycles

General Description  The DS24B33 is a 4096-bit, 1-Wire® EEPROM organized as 16 memory pages of 256 bits each. Data is written to a 32-byte scratchpad, verified, and then copied to the EEPROM memory. The DS24B33 communicates over a single-conductor 1-Wire bus. The communication follows the standar

文件：243.63 Kbytes 页数：22 Pages

Maxim

美信

丝印：K24；Package：SOD-123FL；Surface Mount Schottky Barrier Rectifier

Features Metal silicon junction, majority carrier conduction For surface mounted applications Low power loss, high efficiency High forward surge current capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications

文件：2.53183 Mbytes 页数：4 Pages

UNSEMI

优恩半导体

SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE 20 TO 200V FORWARD CURRENT 2A

DESCRIPTION The DS22W~DS2 20W are available in SOD 123 FL p a ckage FEATURES  M etal silicon junction, majority carrier conduction  For surface mounted applications  Low power loss, high efficiency  High forward surge current capability  For use in low voltage, hi gh frequency in

文件：648.46 Kbytes 页数：6 Pages

AITSEMI

创瑞科技

SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE 20 TO 200V FORWARD CURRENT 2A

DESCRIPTION The DS22W~DS2 20W are available in SOD 123 FL p a ckage FEATURES  M etal silicon junction, majority carrier conduction  For surface mounted applications  Low power loss, high efficiency  High forward surge current capability  For use in low voltage, hi gh frequency in

文件：648.46 Kbytes 页数：6 Pages

AITSEMI

创瑞科技

丝印：K24；Package：SOD-123FL；SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Metal silicon junction,majority carrier conduction Low power loss,high efficiency Built-in strain relief,ideal for automated placement High forward surge current c

文件：1.16064 Mbytes 页数：3 Pages

SY

顺烨电子

Compatible with Other 1-Wire Devices Purchased Separately

文件：1.16113 Mbytes 页数：9 Pages

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Compatible with Other 1-Wire Devices Purchased Separately

文件：1.16113 Mbytes 页数：9 Pages

Maxim

美信