1.0A Power Rectifier

Diffused Junction Type Silicon Diode Features • Plastic molded type. • Peak reverse voltage : 100 to 400V. • Average rectified current : IO=1.0A.

文件：42.05 Kbytes 页数：2 Pages

SANYO

三洋

Diffused Junction Type Silicon Diode 1.0A Power Rectifier

ONSEMI

安森美半导体

4096k Nonvolatile SRAM with Battery Monitor

DESCRIPTION The DS1350 4096k Nonvolatile SRAMs are 4,194,304-bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condit

文件：228.66 Kbytes 页数：12 Pages

Dallas

4096k Nonvolatile SRAM with Battery Monitor

DESCRIPTION The DS1350 4096k Nonvolatile SRAMs are 4,194,304-bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condit

文件：228.66 Kbytes 页数：12 Pages

Dallas

4096k Nonvolatile SRAM with Battery Monitor

DESCRIPTION The DS1350 4096k Nonvolatile SRAMs are 4,194,304-bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condit

文件：228.66 Kbytes 页数：12 Pages

Dallas

4096k Nonvolatile SRAM with Battery Monitor

DESCRIPTION The DS1350 4096k Nonvolatile SRAMs are 4,194,304-bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condit

文件：228.66 Kbytes 页数：12 Pages

Dallas

4096k Nonvolatile SRAM with Battery Monitor

DESCRIPTION The DS1350 4096k Nonvolatile SRAMs are 4,194,304-bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condit

文件：228.66 Kbytes 页数：12 Pages

Dallas

3.3V 4096K Nonvolatile SRAM with Battery Monitor

DESCRIPTION The DS1350W 3.3V 4096K Nonvolatile SRAM is a 4,194,304–bit, fully static, nonvolatile SRAM organized as 524,288 words by eight bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of–tolerance condition. When such

文件：107.99 Kbytes 页数：11 Pages

Dallas

3.3V 4096K Nonvolatile SRAM with Battery Monitor

DESCRIPTION The DS1350W 3.3V 4096K Nonvolatile SRAM is a 4,194,304–bit, fully static, nonvolatile SRAM organized as 524,288 words by eight bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of–tolerance condition. When such

文件：107.99 Kbytes 页数：11 Pages

Dallas

3.3V 4096K Nonvolatile SRAM with Battery Monitor

DESCRIPTION The DS1350W 3.3V 4096K Nonvolatile SRAM is a 4,194,304–bit, fully static, nonvolatile SRAM organized as 524,288 words by eight bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of–tolerance condition. When such

文件：107.99 Kbytes 页数：11 Pages

Dallas