DS134规格书应用电路原装现货美信第8页-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
DS1345ABP-100-IND	文件：211 Kbytes Page：12 Pages	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k Nonvolatile SRAMs are 1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condit 文件：211 Kbytes 页数：12 Pages	Dallas	Dallas
DS1345ABP-70-IND	文件：211 Kbytes Page：12 Pages	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k Nonvolatile SRAMs are 1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condit 文件：211 Kbytes 页数：12 Pages	Dallas	Dallas
DS1345BL	文件：219.44 Kbytes Page：9 Pages	1024K Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024K Nonvolatile SRAMs are 1,048,576–bit, fully static, nonvolatile SRAMs organized as 131,072 words by eight bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of– tolerance condition. When such a c 文件：219.44 Kbytes 页数：9 Pages	Dallas	Dallas
DS1345BL-100	文件：219.44 Kbytes Page：9 Pages	1024K Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024K Nonvolatile SRAMs are 1,048,576–bit, fully static, nonvolatile SRAMs organized as 131,072 words by eight bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of– tolerance condition. When such a c 文件：219.44 Kbytes 页数：9 Pages	Dallas	Dallas
DS1345BL-100-IND	文件：219.44 Kbytes Page：9 Pages	1024K Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024K Nonvolatile SRAMs are 1,048,576–bit, fully static, nonvolatile SRAMs organized as 131,072 words by eight bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of– tolerance condition. When such a c 文件：219.44 Kbytes 页数：9 Pages	Dallas	Dallas
DS1345BL-70	文件：219.44 Kbytes Page：9 Pages	1024K Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024K Nonvolatile SRAMs are 1,048,576–bit, fully static, nonvolatile SRAMs organized as 131,072 words by eight bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of– tolerance condition. When such a c 文件：219.44 Kbytes 页数：9 Pages	Dallas	Dallas
DS1345BL-70-IND	文件：219.44 Kbytes Page：9 Pages	1024K Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024K Nonvolatile SRAMs are 1,048,576–bit, fully static, nonvolatile SRAMs organized as 131,072 words by eight bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of– tolerance condition. When such a c 文件：219.44 Kbytes 页数：9 Pages	Dallas	Dallas
DS1345W	文件：249.84 Kbytes Page：12 Pages	3.3V 1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345W 3.3V 1024k Nonvolatile SRAM is a 1,048,576-bit, fully static, nonvolatile SRAM organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condition. When such a 文件：249.84 Kbytes 页数：12 Pages	Dallas	Dallas
DS1345WP-100	文件：249.84 Kbytes Page：12 Pages	3.3V 1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345W 3.3V 1024k Nonvolatile SRAM is a 1,048,576-bit, fully static, nonvolatile SRAM organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condition. When such a 文件：249.84 Kbytes 页数：12 Pages	Dallas	Dallas
DS1345WP-100-IND	文件：249.84 Kbytes Page：12 Pages	3.3V 1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345W 3.3V 1024k Nonvolatile SRAM is a 1,048,576-bit, fully static, nonvolatile SRAM organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condition. When such a 文件：249.84 Kbytes 页数：12 Pages	Dallas	Dallas

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技术参数

VSUPPLY(V)：
1.8
Date/ Time Format (hh = sec/100)：
YY-MM-DD/ HH
Features：
Square-Wave Output
Time Keeping Current (typ)(nA)：
800
CL(pF)：
12.5
Memory Type：
None
Time of Day Alarms：
0
Functions：
RTC
RoHS Available：
Yes
Package/ Pins：
SOIC (N)/8
Smallest Available Pckg. (max w/pins)(mm2)：
15.6
Oper. Temp.(°C)：
-40 to +85
Budgetary Price (See Notes)：
$1.58 @1k

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市荣泽信电子科技有限公司	DS1340Z-33+T&R	DALLAS	23+	SOIC	10000	全新进口原装现货,价优	询价
深圳市星佑电子有限公司	DS1340Z-33+	DALLAS	05+	原厂原装	564	全新原装绝对有货	询价
深圳市毅创腾电子科技有限公司	DS1340Z-33+TR	MAX原装		SOP8	3200	原装长期供货!	询价
深圳市卓越微芯电子有限公司	DS1342	MAXIM	25+	USOP8	2560	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市联世界科技有限公司	DS1340C-33	MAXIM/DALLAS	24+/25+		300	原装正品现货库存价优	询价
深圳市粤科源兴科技有限公司	DS1345WP-100+	MAXIM	13+	PWRCP	3738	原装分销	询价
深圳市凌旭科技有限公司	DS1340Z-3+	MAXIM	2016+	SOP8	2654	只做原装,假一罚十,公司可开17%增值税发票!	询价
谛辉(北京/上海/青岛 )电子科技有限公司	DS1340Z-33+TR	MAXIM	25+	SMD	18000	原厂直接发货进口原装	询价
深圳市利加科技有限公司	DS1340U-33+	MAXIM	16+	NA	8800	原装现货,货真价优	询价
深圳市一线半导体有限公司	DS1340U-33+	MAXIMINTEGRATEDPRODUCTSI	24+		201		询价

更多DS134供应商更新时间2025-8-28 16:26:00

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