256k Nonvolatile SRAM with Battery Monitor

DESCRIPTION The DS1330 256k NV SRAMs are 262,144-bit, fully static, NV SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithiu

文件：191.48 Kbytes 页数：11 Pages

Dallas

256k Nonvolatile SRAM with Battery Monitor

文件：217.66 Kbytes 页数：10 Pages

Maxim

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256k Nonvolatile SRAM with Battery Monitor

文件：217.66 Kbytes 页数：10 Pages

Dallas

256k Nonvolatile SRAM with Battery Monitor

DESCRIPTION The DS1330 256k NV SRAMs are 262,144-bit, fully static, NV SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithiu

文件：191.48 Kbytes 页数：11 Pages

Dallas

256k Nonvolatile SRAM with Battery Monitor

DESCRIPTION The DS1330 256k NV SRAMs are 262,144-bit, fully static, NV SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithiu

文件：191.48 Kbytes 页数：11 Pages

Dallas

256k Nonvolatile SRAM with Battery Monitor

DESCRIPTION The DS1330 256k NV SRAMs are 262,144-bit, fully static, NV SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithiu

文件：191.48 Kbytes 页数：11 Pages

Dallas

256k Nonvolatile SRAM with Battery Monitor

DESCRIPTION The DS1330 256k NV SRAMs are 262,144-bit, fully static, NV SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithiu

文件：191.48 Kbytes 页数：11 Pages

Dallas

256k非易失SRAM，带有电池监控器

DS1330 256k非易失(NV) SRAM为262,144位、全静态非易失SRAM，按照8位、32,768字排列。每个NV SRAM均自带锂电池及控制电路，控制电路连续监视VCC是否超出容差范围，一旦超出容差范围，锂电池便自动切换至供电状态、写保护将无条件使能、防止数据被破坏。此外，DS1330器件具有监视VCC状态和内部锂电池状态的专用电路。PowerCap模块封装的DS1330器件可以直接表面贴安装、通常与DS9034PC PowerCap配合构成一个完整的非易失SRAM模块。可用来替代32k x 8 SRAM、EEPROM或闪存器件。 \n• 在没有外部电源的情况下最少可以保存数据10年\n• 掉电期间数据被自动保护\n• 当VCC电压跌落时，电源监视器能够复位处理器、并在VCC上升期间持续保持处理器的复位状态\n• 电池监视器核查剩余电量\n• 100ns的读写存取时间 \n• 没有写次数限制\n• 典型待机电流50µA\n• 可升级32k x 8 SRAM、EEPROM或闪存\n• 第一次上电前，锂电池与电路断开、维持保鲜状态\n• ±10% VCC工作范围(DS1330Y)或±5% VCC工作范围(DS1330AB)\n• 可选的-40°C至+85°C工业级温度范围，指定为IND\n• PowerCap;

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亚德诺

Package：34-PowerCap™ 模块；包装：管件 类别：集成电路（IC） 存储器 描述：IC NVSRAM 256KBIT PAR 34PWRCAP

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亚德诺

Package：34-PowerCap™ 模块；包装：管件 类别：集成电路（IC） 存储器 描述：IC NVSRAM 256KBIT PAR 34PWRCAP

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亚德诺