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DS1330W

3.3V 256K Nonvolatile SRAM with Battery Monitor

DESCRIPTION TheDS1330W3.3V256kNonvolatileSRAMisa262,144-bit,fullystatic,nonvolatileSRAMorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchacondi

DallasDallas Semiconductor

亚德诺亚德诺半导体

DS1330WP-150-IND

3.3V 256K Nonvolatile SRAM with Battery Monitor

DESCRIPTION TheDS1330W3.3V256kNonvolatileSRAMisa262,144-bit,fullystatic,nonvolatileSRAMorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchacondi

DallasDallas Semiconductor

亚德诺亚德诺半导体

DS1330Y

256k Nonvolatile SRAM with Battery Monitor

DESCRIPTION TheDS1330256kNVSRAMsare262,144-bit,fullystatic,NVSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditionoccurs,thelithiu

DallasDallas Semiconductor

亚德诺亚德诺半导体

DS1330Y-100

4096k Nonvolatile SRAM with Battery Monitor

DESCRIPTION TheDS13504096kNonvolatileSRAMsare4,194,304-bit,fullystatic,nonvolatileSRAMsorganizedas524,288wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchacondit

DallasDallas Semiconductor

亚德诺亚德诺半导体

DS1330Y-100

1024k Nonvolatile SRAM with Battery Monitor

DESCRIPTION TheDS13451024kNonvolatileSRAMsare1,048,576-bit,fullystatic,nonvolatileSRAMsorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchacondit

DallasDallas Semiconductor

亚德诺亚德诺半导体

DS1330YL

256K Nonvolatile SRAM with Battery Monitor

DESCRIPTION TheDS1330256KNonvolatileSRAMsare262,144–bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsbyeightbits.EachNVSRAMhasaself–containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout–of–tolerancecondition.Whensuchacondit

DallasDallas Semiconductor

亚德诺亚德诺半导体

DS1330YL-100

256K Nonvolatile SRAM with Battery Monitor

DESCRIPTION TheDS1330256KNonvolatileSRAMsare262,144–bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsbyeightbits.EachNVSRAMhasaself–containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout–of–tolerancecondition.Whensuchacondit

DallasDallas Semiconductor

亚德诺亚德诺半导体

DS1330YL-100-IND

256K Nonvolatile SRAM with Battery Monitor

DESCRIPTION TheDS1330256KNonvolatileSRAMsare262,144–bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsbyeightbits.EachNVSRAMhasaself–containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout–of–tolerancecondition.Whensuchacondit

DallasDallas Semiconductor

亚德诺亚德诺半导体

DS1330YL-70

256K Nonvolatile SRAM with Battery Monitor

DESCRIPTION TheDS1330256KNonvolatileSRAMsare262,144–bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsbyeightbits.EachNVSRAMhasaself–containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout–of–tolerancecondition.Whensuchacondit

DallasDallas Semiconductor

亚德诺亚德诺半导体

DS1330YL-70-IND

256K Nonvolatile SRAM with Battery Monitor

DESCRIPTION TheDS1330256KNonvolatileSRAMsare262,144–bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsbyeightbits.EachNVSRAMhasaself–containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout–of–tolerancecondition.Whensuchacondit

DallasDallas Semiconductor

亚德诺亚德诺半导体

详细参数

  • 型号:

    DS133

  • 制造商:

    DALLAS

  • 制造商全称:

    Dallas Semiconductor

  • 功能描述:

    256k Nonvolatile SRAM with Battery Monitor

供应商型号品牌批号封装库存备注价格
MAXIM
17+
SOP8
2500
保证原装正品!优势渠道供应,可订货
询价
DALLAS
25+
SOP8
2500
询价
DALLAS
24+
SO-8
2645
绝对原装自家现货!真实库存!欢迎来电!
询价
MAXIM
13+
USOP
4238
原装分销
询价
MAXIM
24+
原厂原封
2000
全新原装环保
询价
DALLAS
24+
6980
原装现货,可开13%税票
询价
MAX
24+
SOP
1068
原装现货假一罚十
询价
MAXIM
2016+
MSOP8
1388
只做原装,假一罚十,公司可开17%增值税发票!
询价
DALLAS
23+
SOIC
15000
全新进口原装现货,价优
询价
ALTERA
23+
TQFP
9526
询价
更多DS133供应商 更新时间2025-7-13 10:06:00