3.3V 256K Nonvolatile SRAM with Battery Monitor

DESCRIPTION The DS1330W 3.3V 256k Nonvolatile SRAM is a 262,144-bit, fully static, nonvolatile SRAM organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condi

文件：107.99 Kbytes 页数：11 Pages

Dallas

3.3V 256K Nonvolatile SRAM with Battery Monitor

DESCRIPTION The DS1330W 3.3V 256k Nonvolatile SRAM is a 262,144-bit, fully static, nonvolatile SRAM organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condi

文件：107.99 Kbytes 页数：11 Pages

Dallas

256k Nonvolatile SRAM with Battery Monitor

DESCRIPTION The DS1330 256k NV SRAMs are 262,144-bit, fully static, NV SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithiu

文件：191.48 Kbytes 页数：11 Pages

Dallas

1024k Nonvolatile SRAM with Battery Monitor

DESCRIPTION The DS1345 1024k Nonvolatile SRAMs are 1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condit

文件：211 Kbytes 页数：12 Pages

Dallas

4096k Nonvolatile SRAM with Battery Monitor

DESCRIPTION The DS1350 4096k Nonvolatile SRAMs are 4,194,304-bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condit

文件：228.66 Kbytes 页数：12 Pages

Dallas

256K Nonvolatile SRAM with Battery Monitor

DESCRIPTION The DS1330 256K Nonvolatile SRAMs are 262,144–bit, fully static, nonvolatile SRAMs organized as 32,768 words by eight bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of–tolerance condition. When such a condit

文件：219.54 Kbytes 页数：9 Pages

Dallas

256K Nonvolatile SRAM with Battery Monitor

DESCRIPTION The DS1330 256K Nonvolatile SRAMs are 262,144–bit, fully static, nonvolatile SRAMs organized as 32,768 words by eight bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of–tolerance condition. When such a condit

文件：219.54 Kbytes 页数：9 Pages

Dallas

256K Nonvolatile SRAM with Battery Monitor

DESCRIPTION The DS1330 256K Nonvolatile SRAMs are 262,144–bit, fully static, nonvolatile SRAMs organized as 32,768 words by eight bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of–tolerance condition. When such a condit

文件：219.54 Kbytes 页数：9 Pages

Dallas

256K Nonvolatile SRAM with Battery Monitor

DESCRIPTION The DS1330 256K Nonvolatile SRAMs are 262,144–bit, fully static, nonvolatile SRAMs organized as 32,768 words by eight bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of–tolerance condition. When such a condit

文件：219.54 Kbytes 页数：9 Pages

Dallas

256K Nonvolatile SRAM with Battery Monitor

DESCRIPTION The DS1330 256K Nonvolatile SRAMs are 262,144–bit, fully static, nonvolatile SRAMs organized as 32,768 words by eight bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of–tolerance condition. When such a condit

文件：219.54 Kbytes 页数：9 Pages

Dallas