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首页>DS1230AB-200IND>芯片详情
DS1230AB-200IND_DALLAS/亚德诺_NVRAM 256k Nonvolatile SRAM力仕科电子
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产品属性
- 类型
描述
- 型号:
DS1230AB-200IND
- 功能描述:
NVRAM 256k Nonvolatile SRAM
- RoHS:
否
- 制造商:
Maxim Integrated
- 数据总线宽度:
8 bit
- 存储容量:
1024 Kbit
- 组织:
128 K x 8
- 接口类型:
Parallel
- 访问时间:
70 ns
- 电源电压-最大:
5.5 V
- 电源电压-最小:
4.5 V
- 工作电流:
85 mA
- 最大工作温度:
+ 70 C
- 最小工作温度:
0 C
- 封装/箱体:
EDIP
- 封装:
Tube
供应商
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