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DS1230AB-200IND中文资料PDF规格书
厂商型号 |
DS1230AB-200IND |
参数属性 | DS1230AB-200IND 封装/外壳为28-DIP 模块(0.600",15.24mm);包装为管件;类别为集成电路(IC) > 存储器;产品描述:IC NVSRAM 256KBIT PAR 28EDIP |
功能描述 | 256k Nonvolatile SRAM |
文件大小 |
213.86 Kbytes |
页面数量 |
12 页 |
生产厂商 | Dallas Semiconductor Corp. |
企业简称 |
Dallas |
中文名称 | Dallas Semiconductor Corp.官网 |
原厂标识 | |
数据手册 | |
更新时间 | 2024-4-28 22:58:00 |
DS1230AB-200IND规格书详情
DESCRIPTION
The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. DIP-package DS1230 devices can be used in place of existing 32k x 8 static RAMs directly conforming to the popular bytewide 28-pin DIP standard. The DIP devices also match the pinout of 28256 EEPROMs, allowing direct substitution while enhancing performance. DS1230 devices in the Low Profile Module package are specifically designed for surface-mount applications. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.
FEATURES
■ 10 years minimum data retention in the absence of external power
■ Data is automatically protected during power loss
■ Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory
■ Unlimited write cycles
■ Low-power CMOS
■ Read and write access times as fast as 70 ns
■ Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time
■ Full ±10 VCC operating range (DS1230Y)
■ Optional ±5 VCC operating range (DS1230AB)
■ Optional industrial temperature range of -40°C to +85°C, designated IND
■ JEDEC standard 28-pin DIP package
■ New PowerCap Module (PCM) package
- Directly surface-mountable module
- Replaceable snap-on PowerCap provides lithium backup battery
- Standardized pinout for all nonvolatile SRAM products
- Detachment feature on PowerCap allows easy removal using a regular screwdriver
产品属性
- 产品编号:
DS1230AB-200IND
- 制造商:
Analog Devices Inc./Maxim Integrated
- 类别:
集成电路(IC) > 存储器
- 包装:
管件
- 存储器类型:
非易失
- 存储器格式:
NVSRAM
- 技术:
NVSRAM(非易失性 SRAM)
- 存储容量:
256Kb(32K x 8)
- 存储器接口:
并联
- 写周期时间 - 字,页:
200ns
- 电压 - 供电:
4.75V ~ 5.25V
- 工作温度:
-40°C ~ 85°C(TA)
- 安装类型:
通孔
- 封装/外壳:
28-DIP 模块(0.600",15.24mm)
- 供应商器件封装:
28-EDIP
- 描述:
IC NVSRAM 256KBIT PAR 28EDIP
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
DALLAS |
2016+ |
DIP |
3000 |
主营TI,绝对原装,假一赔十,可开17%增值税发票! |
询价 | ||
DALLAS |
99+ |
DIP |
1399 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
DALLAS |
23+ |
DIP |
9980 |
原装正品,支持实单 |
询价 | ||
DALLAS |
2018+ |
DIP |
30000 |
一级代理原装现货假一赔十 |
询价 | ||
23+ |
DIP-18 |
18000 |
询价 | ||||
DALLAS |
2339+ |
DIP |
5645 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
询价 | ||
DALLAS |
23+ |
DIP |
8610 |
专营TI/德州仪器进口原装深圳公司现货 |
询价 | ||
DALLAS |
21+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
询价 | |||
DALLAS |
21+ |
DIP |
13880 |
公司只售原装,支持实单 |
询价 | ||
DALLAS |
2021+ |
DIP |
9598 |
十年专营原装现货,假一赔十 |
询价 |