DS规格书市场行情力特CK-COMPONENTS第7页-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
DS_K6F1016U4C	文件：173.48 Kbytes Page：9 Pages	64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM GENERAL DESCRIPTION The K6F1016U4C families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The families also support low data retention voltage for battery b 文件：173.48 Kbytes 页数：9 Pages	Samsung 三星	Samsung
DS_K6F2008U2E	文件：130.93 Kbytes Page：10 Pages	256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM GENERAL DESCRIPTION The K6F2008U2E families are fabricated by SAMSUNG¢s advanced Full CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also supports low data retention voltage for 文件：130.93 Kbytes 页数：10 Pages	Samsung 三星	Samsung
DS_K6F2016U4E	文件：158.46 Kbytes Page：9 Pages	128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM GENERAL DESCRIPTION The K6F2016U4E families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The families also support low data retention voltage for battery b 文件：158.46 Kbytes 页数：9 Pages	Samsung 三星	Samsung
DS_K6F3216T6M	文件：167.24 Kbytes Page：9 Pages	2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM GENERAL DESCRIPTION The K6F3216T6M families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design. The families also support low data retention voltage for b 文件：167.24 Kbytes 页数：9 Pages	Samsung 三星	Samsung
DS_K6F4016U6G	文件：180.2 Kbytes Page：9 Pages	256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM GENERAL DESCRIPTION The K6F4016U6G families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The family also supports low data retention voltage for battery ba 文件：180.2 Kbytes 页数：9 Pages	Samsung 三星	Samsung
DS_K6F8016U6B	文件：157.37 Kbytes Page：9 Pages	512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM GENERAL DESCRIPTION The K6F8016U6B families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design. The families also support low data retention voltage for b 文件：157.37 Kbytes 页数：9 Pages	Samsung 三星	Samsung
DS_K6F8016U6C	文件：173.22 Kbytes Page：9 Pages	512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM GENERAL DESCRIPTION The K6F8016U6C families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design. The families also support low data retention voltage for b 文件：173.22 Kbytes 页数：9 Pages	Samsung 三星	Samsung
DS_K6X8008C2B	文件：131.19 Kbytes Page：9 Pages	1Mx8 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION The K6X8008C2B families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with lo 文件：131.19 Kbytes 页数：9 Pages	Samsung 三星	Samsung
DS_K6X8008TBN	文件：129.37 Kbytes Page：9 Pages	CMOS SRAM GENERAL DESCRIPTION The K6X8008T2B families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with lo 文件：129.37 Kbytes 页数：9 Pages	Samsung 三星	Samsung
DS_K6X8016C3B	文件：130.19 Kbytes Page：9 Pages	64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM GENERAL DESCRIPTION The K6X8016C3B families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with lo 文件：130.19 Kbytes 页数：9 Pages	Samsung 三星	Samsung

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晶体管资料

型号：
DS010A
别名：
三极管、晶体管、晶体三极管
生产厂家：
制作材料：
性质：
低频或音频放大（LF）_功率放大（PA）
封装形式：
直插封装
极限工作电压：
100V
最大电流允许值：
1A
最大工作频率：
<1MHZ或未知
引脚数：
3
可代换的型号：
最大耗散功率：
10W
放大倍数：
图片代号：
B-91
vtest：
100
htest：
999900
atest：
1
wtest：
10

技术参数

Package：
TO-252
VDS (V)：
70
VGS ±(V)：
25
ID(A)：
65
VGS(th) (min V)：
2
VGS(th) (max V)：
4
RDS(ON) @ 10V Max. (mΩ)：
7.5
Qg (nC)：
90
Ciss(pF)：
3920

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市威尔健半导体有限公司	DS	AO/万代	23+	SOP-8	69820	终端可以免费供样,支持BOM配单!	询价
深圳市旺财半导体有限公司	DS		23+	QFP	16567	正品:QQ;2987726803	询价
深圳市安富世纪电子有限公司	DS	TOSHIBA/东芝	23+	SOT-563-6	6000	专注配单,只做原装进口现货	询价
深圳市得捷芯城科技有限公司	DU	LINEAR/凌特	24+	NA/	1000	优势代理渠道,原装正品,可全系列订货开增值税票	询价
深圳市科芯源微电子有限公司	DU	LINEAR	25+	QFN	1000	原装正品,假一罚十!	询价
深圳市信达伟业电子有限公司	DU	LINEAR	25+	QFN	1000	原装正品,假一罚十!	询价
深圳市粤骏腾电子科技有限公司	DZ		24+		301	现货供应	询价
上海市鑫鸿达电子	E1	Opto 22	2022+		11	全新原装货期两周	询价
香港创芯邦电子有限公司	E1	TOSHIBA	23+		32000	现货库存	询价
深圳市维基鸿电子有限公司	E1	XX	25+	QFN	10000	全新原装现货库存	询价

更多DS供应商更新时间2025-12-22 11:28:00

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