丝印：Ds；Package：SC-70-5；500mA Low Noise LDO with Soft-Start and Output Discharge Function

文件：488.01 Kbytes 页数：10 Pages

FITIPOWER

天钰科技

丝印：DS；Package：SOT-883；NPN resistor-equipped transistors; R1 = 10 k?? R2 = 10 k?

文件：717.9 Kbytes 页数：17 Pages

恩XP

丝印：DS；Package：SOT-883；NPN resistor-equipped transistors

文件：717.9 Kbytes 页数：17 Pages

PHI

飞利浦

丝印：DS；Package：DO-214AA；Surface Mount Transient Voltage Suppressors

文件：279.72 Kbytes 页数：4 Pages

ANOVA

林朋科技

150W A OC IP66/IP67 Driver with 440Vac Protection

Features  Input Over Voltage Protection at 440Vac with 48 Hours  Full Power at Wide Output Current Range (Constant Power)  Adjustable Output Current (AOC) with Potentiometer  Non-dimming Control  Input Surge Protection: DM 4kV, CM 6kV  All-Around Protection: IOVP, OVP, SCP, OTP  IP66

文件：619.5 Kbytes 页数：13 Pages

INVENTRONICS

英飞特电子

Future Technology Devices International Ltd FT231X

[Future Technology Devices International Limited] The FT231X is a USB to full handshake serial UART interface device which simplifies USB implementations and reduces external component count by fully integrating an MTP memory, and an integrated clock circuit which requires no external crystal

文件：830.83 Kbytes 页数：44 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Future Technology Devices International Ltd.

1 Typical Applications  Connecting Android phones to USB accessories  Connecting Android tablets to USB accessories  Controlling instrumentation from Android devices.  Home automation via Android devices  Data logging from USB accessories  Connecting serial printing devices to Androi

文件：757.69 Kbytes 页数：27 Pages

FTDI

飞特帝亚

1Mx16 bit Uni-Transistor Random Access Memory

1M x 16 bit Uni-Transistor CMOS RAM GENERAL DESCRIPTION The K1S161611A is fabricated by SAMSUNG¢s advanced CMOS technology using one transistor memory cell. The device supports Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supp

文件：179.52 Kbytes 页数：10 Pages

Samsung

三星

1M x 16 SDRAM

GENERAL DESCRIPTION The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p

文件：680.82 Kbytes 页数：43 Pages

Samsung

三星

1M x 16 SDRAM

GENERAL DESCRIPTION The K4S161622E is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are pos

文件：675.25 Kbytes 页数：42 Pages

Samsung

三星