DRV8770: 100-V Brushed DC Gate Driver

文件：3.00103 Mbytes 页数：27 Pages

TI

德州仪器

100V H 桥栅极驱动器

The DRV8770 device provides two half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The integrated bootstrap diode and external capacitor generate the correct gate drive voltages for the high-side MOSFETs while the GVDD drives the gates of the low-side M • 100-V H-bridge gate driver \n• Gate driver supply (GVDD): 5-20 V\n• Integrated bootstrap diodes\n• Bootstrap gate drive architecture \n• 1.5-A Sink current\n• Supports up to 15s battery powered applications\n• Fixed Deadtime insertion of 200 ns in TSSOP package\n• 4-ns typical propogation delay ma;

TI

德州仪器

DRV8770: 100-V Brushed DC Gate Driver

文件：3.00103 Mbytes 页数：27 Pages

TI

德州仪器

DRV8770: 100-V Brushed DC Gate Driver

文件：3.00103 Mbytes 页数：27 Pages

TI

德州仪器

丝印：8770；Package：VQFN；DRV8770: 100-V Brushed DC Gate Driver

文件：3.00103 Mbytes 页数：27 Pages

TI

德州仪器

包装：盒 功能：栅极驱动器 类别：开发板，套件，编程器 评估和演示板及套件 描述：EVAL BOARD FOR DRV8770

TI2

德州仪器

Package：24-VFQFN 裸露焊盘；包装：托盘 类别：集成电路（IC） 全半桥驱动器 描述：100V H-BRIDGE GATE DRIVER

TI2

德州仪器