DRV8770数据手册集成电路（IC）的全半桥驱动器规格书PDF

描述 Description

The DRV8770 device provides two half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The integrated bootstrap diode and external capacitor generate the correct gate drive voltages for the high-side MOSFETs while the GVDD drives the gates of the low-side MOSFETs. The gate drive architecture supports gate drive currents up to 750-mA source and 1.5-A sink.

The high voltage tolerance of the gate drive pins improves system robustness. The SHx phase pins can tolerate significant negative voltage transients, while the high-side gate driver supply can support higher positive voltage transients (115-V absolute maximum) on the BSTx and GHx pins. Small propagation delay and delay matching specifications minimize the dead-time requirement which further improves efficiency. Undervoltage protection is provided for both low and high side through GVDD and BST undervoltage lockout.

特性 Features

• 100-V H-bridge gate driver
• Drives N-channel MOSFETs (NMOS)
• Gate driver supply (GVDD): 5-20 V
• MOSFET supply (SHx) support up to 100 V

• Integrated bootstrap diodes
• Supports inverting and non-inverting INLx inputs (QFN package)
• Bootstrap gate drive architecture
• 750-mA source current
• 1.5-A Sink current

• Supports up to 15s battery powered applications
• Low leakage current on SHx pins ( Adjustable deadtime through DT pin in QFN package
• Fixed Deadtime insertion of 200 ns in TSSOP package
• Supports 3.3-V, and 5-V logic inputs with 20-V abs max
• 4-ns typical propogation delay matching
• Compact QFN and TSSOP packages and footprints
• Efficient system design with Power Blocks
• Integrated protection features
• BST undervoltage lockout (BSTUV)
• GVDD undervoltage (GVDDUV)