DRV8770中文资料100V H 桥栅极驱动器数据手册TI规格书

描述 Description

The DRV8770 device provides two half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The integrated bootstrap diode and external capacitor generate the correct gate drive voltages for the high-side MOSFETs while the GVDD drives the gates of the low-side MOSFETs. The gate drive architecture supports gate drive currents up to 750-mA source and 1.5-A sink.

The high voltage tolerance of the gate drive pins improves system robustness. The SHx phase pins can tolerate significant negative voltage transients, while the high-side gate driver supply can support higher positive voltage transients (115-V absolute maximum) on the BSTx and GHx pins. Small propagation delay and delay matching specifications minimize the dead-time requirement which further improves efficiency. Undervoltage protection is provided for both low and high side through GVDD and BST undervoltage lockout.

特性 Features

• 100-V H-bridge gate driver
• Gate driver supply (GVDD): 5-20 V
• Integrated bootstrap diodes
• Bootstrap gate drive architecture
• 1.5-A Sink current
• Supports up to 15s battery powered applications
• Fixed Deadtime insertion of 200 ns in TSSOP package
• 4-ns typical propogation delay matching
• Efficient system design with Power Blocks
• BST undervoltage lockout (BSTUV)
• GVDD undervoltage (GVDDUV)