DRV81620-Q1: 8-Channel, 40V, 700mΩ, Fully Protected, Configurable Low-side and High-side Driver for Automotive Relay, LED, Lighting and Motor Control

1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C, TA • Functional Safety-Capable – Documentation to aid functional safety design • 3V to 40V Analog supply voltage – Cranking capability down to 3V – Supports LV124 automotive standard • 3V to

文件：2.30279 Mbytes 页数：63 Pages

TI

德州仪器

丝印：81620Q1；Package：HTSSOP；DRV81620-Q1: 8-Channel, 40V, 700mΩ, Fully Protected, Configurable Low-side and High-side Driver for Automotive Relay, LED, Lighting and Motor Control

1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C, TA • Functional Safety-Capable – Documentation to aid functional safety design • 3V to 40V Analog supply voltage – Cranking capability down to 3V – Supports LV124 automotive standard • 3V to

文件：2.30279 Mbytes 页数：63 Pages

TI

德州仪器

DRV81620-Q1: 8-Channel Configurable Low-side and High-side Driver for Automotive Relay, LED, Lighting and Motor Control

1 Features • 3V to 40V Analog supply voltage – Cranking capability down to 3V – Supports LV124 standard • 3V to 5.5V Digital supply voltage – Compatible with 3.3V and 5V microcontrollers • 44V minimum drain to source clamping voltage • -19V maximum source to ground clamping voltage • RDS(O

文件：2.2157 Mbytes 页数：55 Pages

TI

德州仪器

丝印：8162；Package：VSSOP；DRV816x 100V Half-Bridge Smart Gate Driver with Integrated Protection and Current Sense Amplifier

1 Features • Drives two N-channel MOSFETs in half-bridge configuration – High-side MOSFET source/drain up to 102V (absolute max) – 8V (5V DRV8162L) to 20V gate drive power supply – Integrated bootstrap diode • Functional Safety Quality-Managed – Documentation available to aid functional s

文件：2.18173 Mbytes 页数：52 Pages

TI

德州仪器

DRV816x 100V Half-Bridge Smart Gate Driver with Integrated Protection and Current Sense Amplifier

1 Features • Drives two N-channel MOSFETs in half-bridge configuration – High-side MOSFET source/drain up to 102V (absolute max) – 8V (5V DRV8162L) to 20V gate drive power supply – Integrated bootstrap diode • Functional Safety Quality-Managed – Documentation available to aid functional s

文件：2.00266 Mbytes 页数：50 Pages

TI

德州仪器

DRV816x 100V Half-Bridge Smart Gate Driver with Integrated Protection and Current Sense Amplifier

1 Features • Drives two N-channel MOSFETs in half-bridge configuration – High-side MOSFET source/drain up to 102V (absolute max) – 8V (5V DRV8162L) to 20V gate drive power supply – Integrated bootstrap diode • 16-level gate drive peak current – 16mA - 1000mA source current – 32mA - 2000m

文件：1.60667 Mbytes 页数：43 Pages

TI

德州仪器

丝印：8162L；Package：VSSOP；DRV816x 100V Half-Bridge Smart Gate Driver with Integrated Protection and Current Sense Amplifier

1 Features • Drives two N-channel MOSFETs in half-bridge configuration – High-side MOSFET source/drain up to 102V (absolute max) – 8V (5V DRV8162L) to 20V gate drive power supply – Integrated bootstrap diode • Functional Safety Quality-Managed – Documentation available to aid functional s

文件：2.18173 Mbytes 页数：52 Pages

TI

德州仪器

具有跛行回家功能的汽车级 40V、6 通道可配置、2 通道高侧驱动器

The DRV81620-Q1 is an eight channel low-side and high-side switch with integrated protection and diagnostics. It is designed to control relays, LEDs, Lamps and motors in automotive and industrial applications.\n\nA serial peripheral interface (SPI) with daisy chain capability is utilized for control • 3V to 40V Analog supply voltage \n• Supports LV124 standard\n• 3V to 5.5V Digital supply voltage \n• 44V minimum drain to source clamping voltage\n• RDS(ON): 630mΩ typical at 12V, 25 °C\n• 2 parallel inputs with mapping functionality\n• Using nSLEEP and IN pins\n• Two independent internal PWM ;

TI

德州仪器