型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
DRV8162 | DRV816x 100V Half-Bridge Smart Gate Driver with Integrated Protection and Current Sense Amplifier 1 Features • Drives two N-channel MOSFETs in half-bridge configuration – High-side MOSFET source/drain up to 102V (absolute max) – 8V (5V DRV8162L) to 20V gate drive power supply – Integrated bootstrap diode • 16-level gate drive peak current – 16mA - 1000mA source current – 32mA - 2000m 文件:1.60667 Mbytes 页数:43 Pages | TI 德州仪器 | TI | |
DRV8162 | DRV816x 100V Half-Bridge Smart Gate Driver with Integrated Protection and Current Sense Amplifier 1 Features • Drives two N-channel MOSFETs in half-bridge configuration – High-side MOSFET source/drain up to 102V (absolute max) – 8V (5V DRV8162L) to 20V gate drive power supply – Integrated bootstrap diode • 16-level gate drive peak current – 16mA - 1000mA source current – 32mA - 2000m 文件:1.65841 Mbytes 页数:45 Pages | TI 德州仪器 | TI | |
DRV8162 | DRV816x 100V Half-Bridge Smart Gate Driver with Integrated Protection and Current Sense Amplifier 1 Features • Drives two N-channel MOSFETs in half-bridge configuration – High-side MOSFET source/drain up to 102V (absolute max) – 8V (5V DRV8162L) to 20V gate drive power supply – Integrated bootstrap diode • Functional Safety Quality-Managed – Documentation available to aid functional s 文件:2.00266 Mbytes 页数:50 Pages | TI 德州仪器 | TI | |
DRV8162 | DRV816x 100V Half-Bridge Smart Gate Driver with Integrated Protection and Current Sense Amplifier 1 Features • Drives two N-channel MOSFETs in half-bridge configuration – High-side MOSFET source/drain up to 102V (absolute max) – 8V (5V DRV8162L) to 20V gate drive power supply – Integrated bootstrap diode • Functional Safety Quality-Managed – Documentation available to aid functional s 文件:2.18173 Mbytes 页数:52 Pages | TI 德州仪器 | TI | |
DRV8162 | 具有 STO 功能的最大 105V 单通道半桥智能栅极驱动器 The DRV816x devices are half-bridge gate drivers capable of driving high-side and low-side N-channel MOSFETs. The gate drive voltages are generated from the GVDD supply pin and the integrated bootstrap circuit is used to drive the high-side FET up to 102V drain. The Smart Gate Drive architecture sup Drives two N-channel MOSFETs in half-bridge configuration \n \nHigh-side MOSFET source/drain up to 102V (absolute max)\n \n8V (5V DRV8162L) to 20V gate drive power supply\n \nIntegrated bootstrap diode\n \n\n \n16-level gate drive peak current \n \n16mA - 1000mA source current\n \n32mA - 2000mA sink; | TI 德州仪器 | TI | |
DRV81620-Q1: 8-Channel, 40V, 700mΩ, Fully Protected, Configurable Low-side and High-side Driver for Automotive Relay, LED, Lighting and Motor Control 1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C, TA • Functional Safety-Capable – Documentation to aid functional safety design • 3V to 40V Analog supply voltage – Cranking capability down to 3V – Supports LV124 automotive standard • 3V to 文件:2.30279 Mbytes 页数:63 Pages | TI 德州仪器 | TI | ||
DRV81242-Q1: 8-Channel, 40V, 700mΩ, Fully Protected, Configurable Low-side and High-side Driver for Automotive Relay, LED, Lighting and Motor Control 1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C, TA • Functional Safety-Capable – Documentation to aid functional safety design • 3V to 40V Analog supply voltage – Cranking capability down to 3V – Supports LV124 automotive standard • 3V to 文件:2.3046 Mbytes 页数:61 Pages | TI 德州仪器 | TI | ||
DRV81080-Q1: 8-Channel, 40V, 700mΩ, Fully Protected High-side Driver for Automotive LED, Lighting and Motor Control 1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C, TA • Functional Safety-Capable – Documentation to aid functional safety design • 3V to 40V Analog supply voltage – Cranking capability down to 3V – Supports LV124 automotive standard • 3V to 文件:2.21868 Mbytes 页数:60 Pages | TI 德州仪器 | TI | ||
DRV81620-Q1: 8-Channel Configurable Low-side and High-side Driver for Automotive Relay, LED, Lighting and Motor Control 1 Features • 3V to 40V Analog supply voltage – Cranking capability down to 3V – Supports LV124 standard • 3V to 5.5V Digital supply voltage – Compatible with 3.3V and 5V microcontrollers • 44V minimum drain to source clamping voltage • -19V maximum source to ground clamping voltage • RDS(O 文件:2.2157 Mbytes 页数:55 Pages | TI 德州仪器 | TI | ||
DRV81602-Q1: 8-Channel Configurable Low-side and High-side Driver for Automotive Relay, LED, Lighting and Motor Control 1 Features • 3V to 40V Analog supply voltage – Cranking capability down to 3V – Supports LV124 standard • 3V to 5.5V Digital supply voltage – Compatible with 3.3V and 5V microcontrollers • 44V minimum drain to source clamping voltage • -19V maximum source to ground clamping voltage • RDS(O 文件:2.20687 Mbytes 页数:54 Pages | TI 德州仪器 | TI |
技术参数
- Architecture:
Gate driver
- Vs (min) (V):
8
- Operating temperature range (°C):
-40 to 125
- 封装:
VSSOP (DGS)
- 引脚:
20
- 尺寸:
24.99 mm² 5.1 x 4.9
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
TI德州仪器 |
22+ |
24000 |
原装正品现货,实单可谈,量大价优 |
询价 | |||
TI |
23+ |
SOT563 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
TI |
25+ |
SOT563 |
8880 |
原装认准芯泽盛世! |
询价 | ||
TI |
24+ |
SOT563 |
10000 |
低于市场价,实单必成,QQ1562321770 |
询价 | ||
TI |
21+ |
SOT563 |
4000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
TI/德州仪器 |
24+ |
SOT-563 |
3500 |
原装现货 |
询价 | ||
TI/德州仪器 |
22+ |
SOT-563 |
3500 |
原装正品 |
询价 | ||
TI(德州仪器) |
24+ |
SOT563 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
TI(德州仪器) |
2405+ |
SOT-563 |
50000 |
只做原装优势现货库存,渠道可追溯 |
询价 | ||
TI |
24+ |
SOT-563 |
9000 |
只做原装正品 有挂有货 假一赔十 |
询价 |
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