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DRV8162

DRV816x 100V Half-Bridge Smart Gate Driver with Integrated Protection and Current Sense Amplifier

1 Features • Drives two N-channel MOSFETs in half-bridge configuration – High-side MOSFET source/drain up to 102V (absolute max) – 8V (5V DRV8162L) to 20V gate drive power supply – Integrated bootstrap diode • 16-level gate drive peak current – 16mA - 1000mA source current – 32mA - 2000m

文件:1.60667 Mbytes 页数:43 Pages

TI

德州仪器

DRV8162

DRV816x 100V Half-Bridge Smart Gate Driver with Integrated Protection and Current Sense Amplifier

1 Features • Drives two N-channel MOSFETs in half-bridge configuration – High-side MOSFET source/drain up to 102V (absolute max) – 8V (5V DRV8162L) to 20V gate drive power supply – Integrated bootstrap diode • 16-level gate drive peak current – 16mA - 1000mA source current – 32mA - 2000m

文件:1.65841 Mbytes 页数:45 Pages

TI

德州仪器

DRV8162

DRV816x 100V Half-Bridge Smart Gate Driver with Integrated Protection and Current Sense Amplifier

1 Features • Drives two N-channel MOSFETs in half-bridge configuration – High-side MOSFET source/drain up to 102V (absolute max) – 8V (5V DRV8162L) to 20V gate drive power supply – Integrated bootstrap diode • Functional Safety Quality-Managed – Documentation available to aid functional s

文件:2.00266 Mbytes 页数:50 Pages

TI

德州仪器

DRV8162

DRV816x 100V Half-Bridge Smart Gate Driver with Integrated Protection and Current Sense Amplifier

1 Features • Drives two N-channel MOSFETs in half-bridge configuration – High-side MOSFET source/drain up to 102V (absolute max) – 8V (5V DRV8162L) to 20V gate drive power supply – Integrated bootstrap diode • Functional Safety Quality-Managed – Documentation available to aid functional s

文件:2.18173 Mbytes 页数:52 Pages

TI

德州仪器

DRV8162

具有 STO 功能的最大 105V 单通道半桥智能栅极驱动器

The DRV816x devices are half-bridge gate drivers capable of driving high-side and low-side N-channel MOSFETs. The gate drive voltages are generated from the GVDD supply pin and the integrated bootstrap circuit is used to drive the high-side FET up to 102V drain. The Smart Gate Drive architecture sup Drives two N-channel MOSFETs in half-bridge configuration \n \nHigh-side MOSFET source/drain up to 102V (absolute max)\n \n8V (5V DRV8162L) to 20V gate drive power supply\n \nIntegrated bootstrap diode\n \n\n \n16-level gate drive peak current \n \n16mA - 1000mA source current\n \n32mA - 2000mA sink;

TI

德州仪器

DRV81620-Q1

DRV81620-Q1: 8-Channel, 40V, 700mΩ, Fully Protected, Configurable Low-side and High-side Driver for Automotive Relay, LED, Lighting and Motor Control

1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C, TA • Functional Safety-Capable – Documentation to aid functional safety design • 3V to 40V Analog supply voltage – Cranking capability down to 3V – Supports LV124 automotive standard • 3V to

文件:2.30279 Mbytes 页数:63 Pages

TI

德州仪器

DRV81620-Q1

DRV81242-Q1: 8-Channel, 40V, 700mΩ, Fully Protected, Configurable Low-side and High-side Driver for Automotive Relay, LED, Lighting and Motor Control

1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C, TA • Functional Safety-Capable – Documentation to aid functional safety design • 3V to 40V Analog supply voltage – Cranking capability down to 3V – Supports LV124 automotive standard • 3V to

文件:2.3046 Mbytes 页数:61 Pages

TI

德州仪器

DRV81620-Q1

DRV81080-Q1: 8-Channel, 40V, 700mΩ, Fully Protected High-side Driver for Automotive LED, Lighting and Motor Control

1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C, TA • Functional Safety-Capable – Documentation to aid functional safety design • 3V to 40V Analog supply voltage – Cranking capability down to 3V – Supports LV124 automotive standard • 3V to

文件:2.21868 Mbytes 页数:60 Pages

TI

德州仪器

DRV81620-Q1

DRV81620-Q1: 8-Channel Configurable Low-side and High-side Driver for Automotive Relay, LED, Lighting and Motor Control

1 Features • 3V to 40V Analog supply voltage – Cranking capability down to 3V – Supports LV124 standard • 3V to 5.5V Digital supply voltage – Compatible with 3.3V and 5V microcontrollers • 44V minimum drain to source clamping voltage • -19V maximum source to ground clamping voltage • RDS(O

文件:2.2157 Mbytes 页数:55 Pages

TI

德州仪器

DRV81620-Q1

DRV81602-Q1: 8-Channel Configurable Low-side and High-side Driver for Automotive Relay, LED, Lighting and Motor Control

1 Features • 3V to 40V Analog supply voltage – Cranking capability down to 3V – Supports LV124 standard • 3V to 5.5V Digital supply voltage – Compatible with 3.3V and 5V microcontrollers • 44V minimum drain to source clamping voltage • -19V maximum source to ground clamping voltage • RDS(O

文件:2.20687 Mbytes 页数:54 Pages

TI

德州仪器

技术参数

  • Architecture:

    Gate driver

  • Vs (min) (V):

    8

  • Operating temperature range (°C):

    -40 to 125

  • 封装:

    VSSOP (DGS)

  • 引脚:

    20

  • 尺寸:

    24.99 mm² 5.1 x 4.9

供应商型号品牌批号封装库存备注价格
TI德州仪器
22+
24000
原装正品现货,实单可谈,量大价优
询价
TI
23+
SOT563
50000
全新原装正品现货,支持订货
询价
TI
25+
SOT563
8880
原装认准芯泽盛世!
询价
TI
24+
SOT563
10000
低于市场价,实单必成,QQ1562321770
询价
TI
21+
SOT563
4000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
TI/德州仪器
24+
SOT-563
3500
原装现货
询价
TI/德州仪器
22+
SOT-563
3500
原装正品
询价
TI(德州仪器)
24+
SOT563
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
TI(德州仪器)
2405+
SOT-563
50000
只做原装优势现货库存,渠道可追溯
询价
TI
24+
SOT-563
9000
只做原装正品 有挂有货 假一赔十
询价
更多DRV8162供应商 更新时间2025-10-4 15:01:00