首页 >DP8622>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-ChannelSiliconMOSFETGeneral-PurposeSwitchingDevice Features •LowON-resistance. •Bestsuitedforlithiumbatteryapplications. •2.5Vdrive. •Compositetype,facilitatinghigh-densitymounting. •Draincommonspecifications. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | SANYO | ||
MetallizedPolypropyleneFilmCapacitor | PanasonicPanasonic Semiconductor 松下松下电器 | Panasonic | ||
PoE-PDInterfaceController,IEEE802.3bt | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
N-ChannelPowerTrench짰MOSFET100V,16A,56m | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-ChannelPowerTrench짰MOSFET100V,16.5A,56m廓 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
Heyco®NylonConduitFittings-90°SweepFittings | HeycoHeyco. 海科 | Heyco | ||
Heyco®NylonConduitFittings-90°SweepFittings | HeycoHeyco. 海科 | Heyco | ||
HDSLTRANSFORMERS | BOTHHAND Bothhand USA | BOTHHAND | ||
18V,2A/4AStep-DownSilentSwitcher3withUltralowNoiseReference FEATURES SilentSwitcher®3Architecture UltralowRMSNoise(10Hzto100kHz):4μVRMS UltralowSpotNoise:4nV/√Hzat10kHz UltralowEMIEmissionsonAnyPCB InternalBypassCapacitorsReduceRadiated EMI HighEfficiencyatHighFrequency UltrafastTransientResponsewithHigh | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
Rail-to-RailI/OCMOSOperationalAmplifiers | SGMICROSG Micro Corp 圣邦股份圣邦微电子（北京）股份有限公司 | SGMICRO |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
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