FDC2114RGHT

Capacitance-to-DigitalConverterforProximityLevelSensingApplications

FH2114

RFPowerMOSFETTransistor75W,30-90MHz,24V

Features •N-Channelenhancementmodedevice •MeetsCECOMdrawingA3012711 •Designedforfrequencyhoppingsystems •30-90MHz •Lowercapacitancesforbroadbandoperation •Lowernoisefigurethanbipolardevices

FH2114

RFMOSFETPowerTransistor,75W,24V30-90MHz

Features •N-ChannelEnhancementModeDevice •MeetsCECOMDrawingA3012711 •DesignedforFrequencyHoppingSystems •30-90MHz •LowerCapacitancesforBroadbandOperation •LowerNoiseFigureThanBipolarDevices

FSP2114

CMOSLOWDROPOUTREGULATORS

FTD2114K

EpitaxialplanartypeNPNsilicontransistor

Features 1)HighDCcurrentgain. hFE=1200(Typ.) 2)Highemitter-basevoltage. VEBO=12V(Min.) 3)LowVCE(sat). VCE(sat)=0.18V(Typ.) (IC/IB=500mA/20mA) 4)WedeclarethatthematerialofproductcompliancewithRoHSrequirements.

GM2114

CMOSPOSITIVEVOLTAGEREGULATOR

Description TheGM2114seriesofpositive,linearregulatorsfeaturelowquiescentcurrent(30uAtyp.)withlowdropoutvoltage,makingthemidealforbatteryapplications. TheseruggeddeviceshavebothThermalShutdown,andCurrentFold-backtopreventdevicefailureunderthe“Worst”ofopera

GRF2114

BroadbandLNA/LinearDriverTuningRange:0.1–2.7GHz

Features Reference:5V/135mA/830MHz •Gain:17.9dB •EvalBoardNF:0.93dB •IP1dB:7.4dBm •OP1dB:24.3dBm •IIP3:22.3dBm •OIP3:40.2dBm •FlexibleBiasVoltageandCurrent •Process:GaAspHEMT Applications •SmallCellsandCellularRepeaters •CellularInfrastructure •

HAT2114R

SiliconNChannelPowerMOSFETHighSpeedPowerSwitching

HAT2114RJ

SiliconNChannelPowerMOSFETHighSpeedPowerSwitching

HDSP2114S

8-Character5x7DotMatrixParallelInputAlphanumericIntelligentDisplay