2SA1412-Z

Marking：DPAK；Package：TO-252；isc Silicon NPN Power Transistor

DESCRIPTION •WithTO-252(DPAK)packaging •ExcellentlinearityofhFE •Lowcollector-to-emittersaturationvoltage •Fastswitchingspeed •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Relaydrivers •High-speedinverters •Conver

2SA1413-Z

Marking：DPAK；Package：TO-252；isc Silicon PNP Power Transistor

DESCRIPTION •WithTO-252(DPAK)packaging •Largecollectorcurrent •Lowcollectorsaturationvoltage •Highpowerdissipation •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •DesignedforuseinDC-DCconverter •Driverofsolenoido

2SB1261-Z

Marking：DPAK；Package：TO-252；isc Silicon PNP Power Transistors

DESCRIPTION •LowCollectorSaturationVoltage •HighPowerDissipation- :PC=10W(Max)@TC=25℃ •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Designedforuseinaudioamplifierandswitching, especiallyinhybridintegratedcir

2SB963-Z

Marking：DPAK；Package：TO-252；isc Silicon PNP Darlington Power Transistor

DESCRIPTION •WithTO-252(DPAK)packaging •VeryhighDCcurrentgain •Monolithicdarlingtontransistorwithintegrated antiparallelcollector-emitterdiode •Complementtotype2SD1286-Z •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIO

2SC3588-Z

Marking：DPAK；Package：TO-252；isc Silicon NPN Power Transistor

DESCRIPTION •LowCollectorSaturationVoltage VCE(sat)=0.5V(Max)@IC=300mA •HighCollector-EmitterBreakdownVoltage V(BR)CEO=400V(Min) •ComplementtoType2SA1400-Z •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Designed

2SC3631-Z

Marking：DPAK；Package：TO-252；isc Silicon NPN Power Transistor

DESCRIPTION •WithTO-252(DPAK)packaging •ExcellentlinearityofhFE •Lowcollector-to-emittersaturationvoltage •Fastswitchingspeed •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Relaydrivers •High-speedinverters •Conver

2SC3632-Z

Marking：DPAK；Package：TO-252；isc Silicon NPN Power Transistor

DESCRIPTION •WithTO-252(DPAK)packaging •Highcollector-emittervoltage •Lowcollectorsaturationvoltage •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Highvoltageswitching.

2SD1286-Z

Marking：DPAK；Package：TO-252；isc Silicon NPN Darlington Power Transistor

DESCRIPTION •WithTO-252(DPAK)packaging •VeryhighDCcurrentgain •Monolithicdarlingtontransistorwithintegrated antiparallelcollector-emitterdiode •Complementtotype2SB963-Z •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATION

AOD409

Marking：DPAK；Package：TO-252；isc P-Channel MOSFET Transistor

•FEATURES •WithTO-252(DPAK)packaging •Highspeedswitching •Lowgateinputresistance •Standardlevelgatedrive •Easytouse •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Powersupply •Switchin

AOD409G

Marking：DPAK；Package：TO-252；isc P-Channel MOSFET Transistor

•DESCRITION •Besuitableforsynchronousrectificationforserverand generalpurposeapplications •FEATURES •DrainCurrent–ID=-28A@TC=25℃ •DrainSourceVoltage- :VDSS=-60V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=40mΩ(Max) •100avalanchetested •Minimum