80V 175℃ N-CHANNEL ENHANCEMENT MODE MOSFET

This new generation MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance. This device is ideal for use in power management and load switch. •Rated to +175°C — Ideal for High Ambient Temperature Environments\n•High Conversion Efficiency\n•Low RDS(ON) — Minimizes On State Losses\n;

Diodes

美台半导体

80V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP. •Rated to +175°C – Ideal for High Ambient Temperature Environments\n•High Conversion Efficiency\n•Lead-Free Finish; RoHS Compliant (Notes 1 & 2)\n•The DMTH8008SPSQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101qualified, PPAP capable, and manufacture;

Diodes

美台半导体

3 PHASE BRIDGE MODULES

文件：80.15 Kbytes 页数：2 Pages

Microsemi

美高森美

High Speed LAN Interface Module

文件：17.98 Kbytes 页数：1 Pages

PCA

High Speed LAN Interface Module

High Speed LAN Interface Module • Recommended for 10/100, 100 TX & 155 Mb/S Applications (Requiring 1:1 Magnetics) • Robust construction allows for toughest soldering processes • Complies with or exceeds IEEE 802.3, 10/100Base-TX Standards • Guaranteed to operate with 8 mA DC bias at 70°C

文件：18.01 Kbytes 页数：1 Pages

PCA